DataSheet26.com

NTE112 PDF даташит

Спецификация NTE112 изготовлена ​​​​«NTE» и имеет функцию, называемую «Silicon Small Signal Schottky Diode».

Детали детали

Номер произв NTE112
Описание Silicon Small Signal Schottky Diode
Производители NTE
логотип NTE логотип 

2 Pages
scroll

No Preview Available !

NTE112 Даташит, Описание, Даташиты
NTE112
Silicon Small Signal Schottky Diode
Description:
The NTE112 is a metal to silicon junction diode in a DO35 type package primarly intended for UHF
mixers and ultrafast switching applications.
Absolute Maximum Ratings:
Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Forward Continuous Current (TA = +25°C, Note 1), IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Surge Non–Repetitive Forward Current (tp 1s, Note 1), IFSM . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°
Thermal Resistance, Junction–to–Ambient (Note 1), Rth (j–a) . . . . . . . . . . . . . . . . . . . . . . . . 400°C/W
Maximum Lead Temperature (During soldering, 4mm from case, 10s max), TL . . . . . . . . . . +230°C
Note 1. On infinite heatsink with 4mm lead length.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Static Characteristics
Breakdown Voltage
Forward Voltage Drop
Reverse Current
Dynamic Characteristics
V(BR)
VF
IR
IR = 100µA
IF = 10mA, Note 2
VR = 1V, Note 2
Capacitance
Stored Charge
Frequency
C VR = 0V, f = 1MHz
QS IF = 10mA, Note 3
F f = 1GHz, Note 4
Min Typ Max Unit
5––V
– – 0.55 V
– – 0.05 µA
– – 1 pF
– – 3 pC
– 6 7 dB
Note 2. Pulse Test: Pulse Width 300µs, Duty Cycle < 2%.
Note 3. Measured on a B–line Electronics QS–3 stored charge meter.
Note 4. Noise Figure Test: – Diode is inserted in a tuned stripline circuit.
Local oscillator frequency 1GHz
Local oscillator power 1mW
Intermediate frequency amplifier, tuned on 30MHz, has a noise
figure, 1.5dB.









No Preview Available !

NTE112 Даташит, Описание, Даташиты
1.000 (25.4) Min
.200 (5.08) Max
.022 (.509) Dia Max
.090 (2.28) Dia Max
Color Band Denotes Cathode










Скачать PDF:

[ NTE112.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NTE11Silicon Complementary Transistors High Current AmplifierNTE
NTE
NTE1100Integrated Circuit TV Sound IF Amp / FM IF AmpNTE
NTE
NTE1101Integrated Circuit General Purpose Amp / Mixer / and OscillatorNTE
NTE
NTE1102Integrated Circuit 3 Stage Audio AmplifierNTE
NTE

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск