NTE121 PDF даташит
Спецификация NTE121 изготовлена «NTE» и имеет функцию, называемую «Germanium PNP Transistor Audio Frequency Power Amplifier». |
|
Детали детали
Номер произв | NTE121 |
Описание | Germanium PNP Transistor Audio Frequency Power Amplifier |
Производители | NTE |
логотип |
2 Pages
No Preview Available ! |
NTE121
Germanium PNP Transistor
Audio Frequency Power Amplifier
Description:
The NTE121 is a Germanium PNP Alloy Junction transistor in a TO3 type package designed as an
audio frequency power output amplifier.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector–Emitter Voltage (RBE = 68Ω), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Power Dissipation (TC ≤ +55°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +100°C
Note 1. Matched pairs are available upon request (NTE121MP). Matched pairs have their gain
specification (hFE) matched to within 10% of each other.
w Electrical Characteristics: (TA = +25°C unless otherwise specified)
w Parameter
Symbol
Test Conditions
wCollector–Emitter Breakdown Voltage V(BR)CER IC(peak) = –0.6A, RBE = 68Ω
.DCollector Cutoff Current
ICBO VCB = 30V, IE = 0
DC Current Gain
atBase–Emitter Input Voltage
hFE VCE = 2V, IC = 20mA
VBE VCE = 2V, IC = 1A
aSCollector–Emitter Saturation Voltage VCE(sat) IC = 10A, IB = 1A
heet4U.comTransition Frequency
fT VCB = 2V, IE = 1A
Min Typ Max Unit
45 – – V
– – 0.5 mA
50 90 165
– 0.38 –
V
– 0.3 –
V
– 300 – kHz
No Preview Available ! |
.350 (8.89)
.135 (3.45) Max
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
.040 (1.02)
Emitter
.215 (5.45)
.430
(10.92)
1.187 (30.16)
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case
Скачать PDF:
[ NTE121.PDF Даташит ]
Номер в каталоге | Описание | Производители |
NTE12 | Silicon Complementary Transistors | NTE |
NTE120 | Diode ( Rectifier ) | American Microsemiconductor |
NTE1200 | Integrated Circuit Color TV Chroma Processor | NTE |
NTE1205M | Isolated 1W Single Output SM DC/DC Converters | C&D Technologies |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |