NTE126 PDF даташит
Спецификация NTE126 изготовлена «NTE» и имеет функцию, называемую «Germanium Mesa Transistor / PNP / for High-Speed Switching Applications». |
|
Детали детали
Номер произв | NTE126 |
Описание | Germanium Mesa Transistor / PNP / for High-Speed Switching Applications |
Производители | NTE |
логотип |
2 Pages
No Preview Available ! |
NTE126
Germanium Mesa Transistor, PNP,
for High–Speed Switching Applications
Maximum Ratings:
Collector–Emitter Voltage, VCE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15Vdc
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15Vdc
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5Vdc
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0mW/°C
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +100°C
Storage Junction Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +100°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol Min Max Unit
Collector–Base Breakdown Voltage
(IC = 100µAdc, IE = 0)
BVCBO
Vdc
15 –
Emitter–Base Breakdown Voltage
(IE = 100µAdc, IC = 0)
Collector–Latch–Up Voltage
(VCC = 11.5 Vdc)
Collector–Emitter Cutoff Current
(VCE = 15Vdc)
Collector–Base Cutoff Current
(VCB = 6Vdc, IE = 0)
BVEBO
LVCEX
ICES
ICBO
Vdc
2.5 –
Vdc
11.5 –
µAdc
– 100
µAdc
– 3.0
DC Current Gain
(IC = 10mAdc, VCE = 0.3Vdc)
(IC = 50mAdc, VCE = 1Vdc)
(IC = 100mAdc, VCE = 1Vdc)
hFE –
40 –
40 –
40 –
Collector–Emitter Saturation Voltage
(IC = 10mAdc, IB = 1mAdc)
(IC = 50mAdc, IB = 5mAdc)
(IC = 100mAdc, IB = 10mAdc)
VCE(sat)
Vdc
– 0.18
– 0.35
– 0.60
No Preview Available ! |
Electrical Characteristics (Cont’d): (TA = 25°C)
Parameter
Base–Emitter Saturation Voltage
(IC = 10mAdc, IB = 1mAdc)
(IC = 50mAdc, IB = 5mAdc)
(IC = 100mAdc, IB = 10mAdc)
Current–Gain–Bandwidth Product
(IE = 20mAdc, VCB = 1.0Vdc, f = 100MHz)
Output Capacitance
(VCB = 10Vdc, IE = 0, f = 1MHz)
Emitter Transition Capacitance
(VEB = 1Vdc)
Turn–On Time
(IC = 10mAdc, IB1 = 5mAdc, VBE(off) = 1.25Vdc)
(IC = 100mAdc, IB1 = 5mAdc, VBE(off) = 1.25Vdc)
Turn–Off Time
(IC = 10mAdc, IB1 = 1mAdc, IB2 = 0.25mAdc)
(IC = 100mAdc, IB1 = 5mAdc, IB2 = 1.25mAdc)
Total Control Charge
(IC = 10mAdc, IB = 1mAdc)
(IC = 100mAdc, IB = 5mAdc)
Symbol
VBE(sat)
fT
Cob
CTe
ton
toff
QT
Min
0.30
0.40
0.40
300
–
–
–
–
–
–
–
–
Max
0.50
0.75
1.00
–
4.0
3.5
50
50
85
85
80
125
Unit
Vdc
MHz
pF
pF
ns
ns
pC
.210
(5.33)
Max
.500
(12.7)
Min
.230 (5.84) Dia Max
.195 (4.95) Dia Max
Emitter
.018 (0.45)
Base
Collector
45°
.041 (1.05)
Скачать PDF:
[ NTE126.PDF Даташит ]
Номер в каталоге | Описание | Производители |
NTE12 | Silicon Complementary Transistors | NTE |
NTE120 | Diode ( Rectifier ) | American Microsemiconductor |
NTE1200 | Integrated Circuit Color TV Chroma Processor | NTE |
NTE1205M | Isolated 1W Single Output SM DC/DC Converters | C&D Technologies |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |