DataSheet26.com

NTE126 PDF даташит

Спецификация NTE126 изготовлена ​​​​«NTE» и имеет функцию, называемую «Germanium Mesa Transistor / PNP / for High-Speed Switching Applications».

Детали детали

Номер произв NTE126
Описание Germanium Mesa Transistor / PNP / for High-Speed Switching Applications
Производители NTE
логотип NTE логотип 

2 Pages
scroll

No Preview Available !

NTE126 Даташит, Описание, Даташиты
NTE126
Germanium Mesa Transistor, PNP,
for High–Speed Switching Applications
Maximum Ratings:
Collector–Emitter Voltage, VCE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15Vdc
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15Vdc
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5Vdc
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0mW/°C
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +100°C
Storage Junction Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +100°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol Min Max Unit
Collector–Base Breakdown Voltage
(IC = 100µAdc, IE = 0)
BVCBO
Vdc
15 –
Emitter–Base Breakdown Voltage
(IE = 100µAdc, IC = 0)
Collector–Latch–Up Voltage
(VCC = 11.5 Vdc)
Collector–Emitter Cutoff Current
(VCE = 15Vdc)
Collector–Base Cutoff Current
(VCB = 6Vdc, IE = 0)
BVEBO
LVCEX
ICES
ICBO
Vdc
2.5 –
Vdc
11.5 –
µAdc
– 100
µAdc
– 3.0
DC Current Gain
(IC = 10mAdc, VCE = 0.3Vdc)
(IC = 50mAdc, VCE = 1Vdc)
(IC = 100mAdc, VCE = 1Vdc)
hFE
40 –
40 –
40 –
Collector–Emitter Saturation Voltage
(IC = 10mAdc, IB = 1mAdc)
(IC = 50mAdc, IB = 5mAdc)
(IC = 100mAdc, IB = 10mAdc)
VCE(sat)
Vdc
– 0.18
– 0.35
– 0.60









No Preview Available !

NTE126 Даташит, Описание, Даташиты
Electrical Characteristics (Contd): (TA = 25°C)
Parameter
BaseEmitter Saturation Voltage
(IC = 10mAdc, IB = 1mAdc)
(IC = 50mAdc, IB = 5mAdc)
(IC = 100mAdc, IB = 10mAdc)
CurrentGainBandwidth Product
(IE = 20mAdc, VCB = 1.0Vdc, f = 100MHz)
Output Capacitance
(VCB = 10Vdc, IE = 0, f = 1MHz)
Emitter Transition Capacitance
(VEB = 1Vdc)
TurnOn Time
(IC = 10mAdc, IB1 = 5mAdc, VBE(off) = 1.25Vdc)
(IC = 100mAdc, IB1 = 5mAdc, VBE(off) = 1.25Vdc)
TurnOff Time
(IC = 10mAdc, IB1 = 1mAdc, IB2 = 0.25mAdc)
(IC = 100mAdc, IB1 = 5mAdc, IB2 = 1.25mAdc)
Total Control Charge
(IC = 10mAdc, IB = 1mAdc)
(IC = 100mAdc, IB = 5mAdc)
Symbol
VBE(sat)
fT
Cob
CTe
ton
toff
QT
Min
0.30
0.40
0.40
300
Max
0.50
0.75
1.00
4.0
3.5
50
50
85
85
80
125
Unit
Vdc
MHz
pF
pF
ns
ns
pC
.210
(5.33)
Max
.500
(12.7)
Min
.230 (5.84) Dia Max
.195 (4.95) Dia Max
Emitter
.018 (0.45)
Base
Collector
45°
.041 (1.05)










Скачать PDF:

[ NTE126.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NTE12Silicon Complementary TransistorsNTE
NTE
NTE120Diode ( Rectifier )American Microsemiconductor
American Microsemiconductor
NTE1200Integrated Circuit Color TV Chroma ProcessorNTE
NTE
NTE1205MIsolated 1W Single Output SM DC/DC ConvertersC&D Technologies
C&D Technologies

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск