NTE13 PDF даташит
Спецификация NTE13 изготовлена «NTE» и имеет функцию, называемую «Silicon NPN Transistor Low Voltage Output Amp». |
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Детали детали
Номер произв | NTE13 |
Описание | Silicon NPN Transistor Low Voltage Output Amp |
Производители | NTE |
логотип |
2 Pages
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NTE13
Silicon NPN Transistor
Low Voltage Output Amp
Features:
D Low Collector–Emitter Saturation Voltage
D High DC Current Gain
D An M Type Mold package that Allows Downsizing of Equipment and Automatic Insertion by
Taping and Magazine Packaging
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Collector–Base Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Transistion Frequency
Collector Capaciatnce
ICBO VCB = 25V, IC = 0
VCBO IC = 10µA, IE = 0
VCEO IC = 1mA, IB = 0
VEBO IE = 10µA, IC = 0
hFE VCE = 2V, IC = 500mA, Note 1
VCE = 2V, IC = 1A, Note 1
VCE(sat) IC = 500mA, IB = 20mA
VBE(sat) IC = 500mA, IB = 50mA
fT VCB = 10V, –IE = 50mA
Cob VCB = 10V, IE = 0, f = 1MHz
Note 1. Pulse Test
Min Typ Max Unit
– – 100 nA
25 – – V
20 – – V
12 – – V
400 – 800
60 – –
– 0.13 0.4 V
– – 1.2 V
– 200 – MHz
– 10 – pF
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.271 (6.9)
.098
(2.5)
.137
(3.5)
BCE
.039 (1.0)
.039 (1.0)
.122
(3.1)
.177
(4.5)
.161
(4.1)
.098 (2.5)
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