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NTE16006 PDF даташит

Спецификация NTE16006 изготовлена ​​​​«NTE» и имеет функцию, называемую «Silicon NPN Transistor Low Frequency Output Amp w/High Current Gain».

Детали детали

Номер произв NTE16006
Описание Silicon NPN Transistor Low Frequency Output Amp w/High Current Gain
Производители NTE
логотип NTE логотип 

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NTE16006 Даташит, Описание, Даташиты
NTE16006
Silicon NPN Transistor
Low Frequency Output Amp
w/High Current Gain
Features:
D High DC Current Gain
D Low Collector–Emitter Saturation Voltage
D An M type mold package that allows easy manual and automatic insertion. Can be firmly
mounted flush to PCB surface
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Collector Power Dissipation (Note 1), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 ° to +150°C
Note 1. Copper foil on PCB against Collector: 1.7mm thick, 1cm2 in area.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cut–Off Current
Collector–Base Voltage
ICBO
ICEO
VCBO
VCB = 15V, IE = 0
VCE = 15V, IB = 0
IC = 10µA, IE = 0
Collector–Emitter Voltage
Emitter–Base Voltage
DC Current Gain
VCEO
VEBO
hFE
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 10V, IC = 150mA, Note 2
Collector–Emitter Saturation Voltage VCE(sat) IC = 500mA, IB = 50mA, Note 2
Transition Frequency
Collector Output Capacitance
fT VCB = 20V, IE = –20mA, f = 200MHz
Cob VCB = 10 V, IE = 0, f = 1MHz
Min Typ Max Unit
– – 1 µA
– – 10 µA
20 – – V
20 – – V
15 – – V
1000 – 2500 –
– – 0.4 V
– 55 – MHz
– 11 15 pF
Note 2. Pulse Measurement









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NTE16006 Даташит, Описание, Даташиты









No Preview Available !

NTE16006 Даташит, Описание, Даташиты
.271 (6.9)
.098
(2.5)
.137
(3.5)
BCE
.039 (1.0)
.039 (1.0)
.122
(3.1)
.177
(4.5)
.161
(4.1)
.098 (2.5)










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