DataSheet26.com

NTE194 PDF даташит

Спецификация NTE194 изготовлена ​​​​«NTE» и имеет функцию, называемую «Silicon NPN Transistor Audio Power Amplifier».

Детали детали

Номер произв NTE194
Описание Silicon NPN Transistor Audio Power Amplifier
Производители NTE
логотип NTE логотип 

2 Pages
scroll

No Preview Available !

NTE194 Даташит, Описание, Даташиты
NTE194
Silicon NPN Transistor
Audio Power Amplifier
Description:
The NTE194 is a silicon NPN amplifier transistor packaged in a standard TO92 case.
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/°C
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W
Thermal Resistance, Junction–to–Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . 357°C/W
Note 1 RthJA is measured with the device soldered into a typical printed circuit board.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collctor–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
V(BR)CEO IC = 1mA, IB = 0, Note 2
V(BR)CBO IC = 100µA, IE = 0
V(BR)EBO IE = 10µA, IC = 0
ICBO VCB = 120V, IE = 0
VCB = 120V, IE = 0, TA = +100°C
IEBO VEB = 4V, IC = 0
Min Typ Max Unit
180 –
180 –
6–
––
––
––
–V
–V
–V
50 nA
50 nA
50 nA
Note 2 Pulse Test: Pulse Width = 300µs, Duty Cycle = 2.0%.









No Preview Available !

NTE194 Даташит, Описание, Даташиты
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 2)
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
Small–Signal Characteristics
hFE
VCE(sat)
VBE(sat)
VCE = 5V, IC = 1mA
VCE = 5V, IC = 10mA
VCE = 5V, IC = 50mA
IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA
IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA
80 – –
80 250
30 – –
– – 0.15 V
– – 0.20 V
– – 1.0 V
– – 1.0 V
Current GainBandwidth Product
Output Capacitance
Input Capacitance
SmallSignal Current Gain
Noise Figure
fT
Cobo
Cibo
hfe
NF
VCE = 10V, IC = 10mA, f = 100MHz
VCB = 10V, IE = 0, f = 1MHz
VBE = 0.5V, IC = 0, f = 1MHz
VCE = 10V, IC = 1mA, f = 1kHz
VCE = 5V, IC = 250µA, RS = 1k,
f = 10Hz to 15.7kHz
100 300 MHz
– – 6 pF
– – 20 pF
50 200
– – 8.0 dB
Note 2 Pulse Test: Pulse Width = 300µs, Duty Cycle = 2.0%.
.210
(5.33)
Max
.135 (3.45) Min
Seating Plane
.500
(12.7)
Min
.021 (.445) Dia Max
.100 (2.54)
.105 (2.67) Max
.205 (5.2) Max
EBC
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max










Скачать PDF:

[ NTE194.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NTE19Silicon Complementary TransistorsNTE
NTE
NTE190Silicon NPN Transistor High Voltage AmplifierNTE
NTE
NTE1900Integrated Circuit 3-Terminal Adjustable Positive Voltage RegulatorNTE
NTE
NTE1901Integrated Circuit Negative Adjustable Voltage Regulator / -1.2V to -37V / 100mANTE
NTE

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск