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PDF NTE2023 Data sheet ( Hoja de datos )
| Número de pieza | NTE2023 | |
| Descripción | Integrated Circuit General Purpose / High Current 7-Segment Display Driver | |
| Fabricantes | NTE | |
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Hay una vista previa y un enlace de descarga de NTE2023 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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NTE2023
Integrated Circuit
General Purpose, High Current
7–Segment Display Driver
Description:
The NTE2023 is a general purpose high current transistor array in a 16–Lead DIP type package com-
prised of seven high current silicon NPN transistor on a common monolithic substrate. It is connected
in a common–collector configuration.
Absolute Maximum Ratings:
Power Dissipation (Any One Transistor), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Operating Ambient Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +85°C
Individual Transistor Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector–Substrate Voltage, VCIO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Note 1. The collector of each transistor in the NTE2023 is isolated from the substrate by an integral
diode. The substrate must be connected to a voltage which is more negative than any collec-
tor voltage so as to maintain isolation between transistors, and to provide normal transistor
action. Undesired coupling between transistors is avoided by maintaining the substrate (5)
at either DC or signal (AC) ground. An appropriate bypass capacitor can be used to establish
a signal ground.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector–Emitter Breakdown Voltage
Collector–Substrate Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
V(BR)CES
V(BR)CIE
V(BR)CEO
V(BR)EBO
IC = 500µA
ICI = 500µA
IC = 1mA
IC = 500µA
Forward Current Transfer Ratio
hFE VCE = 0.5V, IC = 30mA
VCE = 0.8V, IC = 50mA
Min Typ Max Unit
20 80 – V
20 80 – V
16 40 – V
57–V
30 80 –
40 85 –
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet NTE2023.PDF ] | |
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