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NTE2317 PDF даташит

Спецификация NTE2317 изготовлена ​​​​«NTE» и имеет функцию, называемую «Silicon NPN Transistor High Voltage Fast Switching Power Darlington».

Детали детали

Номер произв NTE2317
Описание Silicon NPN Transistor High Voltage Fast Switching Power Darlington
Производители NTE
логотип NTE логотип 

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NTE2317 Даташит, Описание, Даташиты
NTE2317
Silicon NPN Transistor
High Voltage Fast Switching Power Darlington
Description:
The NTE2317 is a multiepitaxial bipolar NPN transistor in a monolithic Darlington configuration
mounted in a TO218 type package designed for use in automotive ignition applications and inverter
circuits for motor controls. Controlled performances in the linear region make this device particularly
suitable for car ignitions where current limiting is achieved desaturing the darlington.
Features:
D High Performance Electronic Ignition Darlington
D High Ruggedness
Applications:
D Automotive Market
Absolute Maximum Ratings:
Collector–Emitter Voltage (VBE = 0), VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Collector–Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V
Emitter–Base Voltage (IC = 0), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Peak (tp 10ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Base Current, IB
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Peak (tp 10ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Total Power Dissipation (TC +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W
Maximum Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1°C/W









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NTE2317 Даташит, Описание, Даташиты
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
CollectorEmitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 1)
VCEO(sus)
ICES
ICEO
IEBO
IC = 100mA, Note 1
TJ = +25°C VCE = 500V,
TJ = +125°C VBE = 0
VCE = 450V, IB = 0
IC = 0, VEB = 5V
450
––
––
––
––
V
1 mA
5 mA
1 mA
50 mA
CollectorEmitter Saturation Voltage VCE(sat) IC = 8A, IB = 150mA
BaseEmitter Saturation Voltage
VBE(sat) IC = 8A, IB = 150mA
DC Current Gain
hFE IC = 5A, VCE = 10V
Diode Forward Voltage
VF IF = 10A
Switching Characteristics (Switching Times on Inductive Load)
1.09 1.8
1.77 2.2
300 – –
1.43 2.8
V
V
V
Storage Time
Fall Time
ts VCC = 12V, VBE = 0, LB = 7mH, 15 µs
tf
IC = 7A, IB = 70mA, RBE = 47,
Vclamp= 300V
0.5
µs
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 1.5%.
.600
(15.24)
C
.060 (1.52)
.173 (4.4)
.156
(3.96)
Dia.
BCE
.550
(13.97) .430
(10.92)
B
800
50
C
E
.500
(12.7)
Min
.055 (1.4)
.216 (5.45)
.015 (0.39)
NOTE: Dotted line indicates that
case may have square corners










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