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PDF NTE2377 Data sheet ( Hoja de datos )
| Número de pieza | NTE2377 | |
| Descripción | MOSFET N-Channel / Enhancement Mode / High Speed | |
| Fabricantes | NTE | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de NTE2377 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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NTE2377
MOSFET
N–Channel,
Enhancement Mode, High Speed
Description:
The NTE2377 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive
and very fast switching times make this device ideal for high speed switching applications. Typical
applications include switching mode power supplies, uninterruptible power supplies, and motor
speed control.
Features:
D Low ON–State Resistance
D Very High–Speed Switching
D Converters
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Drain–Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V
Gate–Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
DC Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Pulsed Drain Current (Note 1), IDP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36A
Allowable Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
Maximum Channel Temperature, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. Pulse Width ≤ 10µs, Duty Cycle ≤ 1%.
Note 2. Be careful in handling the NTE2377 because it has no protection diode between gate and
source.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Drain–Source Breakdown Voltage V(BR)DSS ID = 1mA, VGS = 0
Zero–Gate Voltage Drain Current
IDSS VGS = 0, VDS = Max Rating
Gate–Source Leakage Current
IGSS VDS = 0, VGS = ±30V
Cutoff Voltage
VGS(off) VDS = 10V, ID = 1mA
Static Drain–Source On Resistance RDS(on) VGS = 10V, ID = 4A
Forward Transconductance
gfs VDS = 20V, ID = 4A
Min Typ Max Unit
900 –
–V
– – 1.0 mA
– – ±100 nA
2 – 3V
– 1.2 1.6 Ω
2.5 5.0 – mho
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet NTE2377.PDF ] | |
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