NTE2385 PDF даташит
Спецификация NTE2385 изготовлена «NTE» и имеет функцию, называемую «MOSFET N-Ch / Enhancement Mode High Speed Switch». |
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Детали детали
Номер произв | NTE2385 |
Описание | MOSFET N-Ch / Enhancement Mode High Speed Switch |
Производители | NTE |
логотип |
3 Pages
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NTE2385
MOSFET
N–Ch, Enhancement Mode
High Speed Switch
Features:
D Dynamic dv/dt Rating
D Repetitive Avalanche Rated
D Fast Switching
D Ease of Paralleling
D Simple Drive Requirements
Absolute Maximum Ratings:
Continuous Drain Current (VGS = 10V), ID
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0A
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.1A
Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32A
Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W
Derate Linearly Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/°C
Gate–to–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
Single Pulse Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 510mJ
Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13mJ
Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5V/ns
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL . . . . . . . . . . . . . . . . . +300°C
Mounting Torque (6–32 or M3 Screw) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfin (1.1Nm)
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62°C/W
Typical Thermal Resistance, Case–to–Sink (Flat, Greased Surface), RthCS . . . . . . . . . . . . 0.5°C/W
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 2. VDD = 50V, starting TJ = +25°C, L = 14mH, RG = 25Ω, IAS = 8A
Note 3. ISD ≤ 8A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, TJ ≤ +150°C
Note 4. Pules Width ≤ 300µs, Duty Cycle ≤ 2%.
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Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Drain–to–Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain–to–Source On–Resistance
Gate Threshold Voltage
V(BR)DSS
∆V(BR)DSS
∆TJ
RDS(on)
VGS(th)
VGS = 0V, ID = 250µA
Reference to +25°C, ID = 1mA
VGS = 10V, ID = 4.8A, Note 4
VDS = VGS, ID = 250µA
500 – – V
– 0.78 – V/°C
– – 0.85 Ω
2.0 – 4.0 V
Forward Transconductance
Drain–to–Source Leakage Current
Gate–to–Source Forward Leakage
Gate–to–Source Reverse Leakage
gfs
IDSS
IGSS
IGSS
VDS = 50V, ID = 4.8A, Note 4
VDS = 500V, VGS = 0V
VDS = 400V, VGS = 0V, TJ = +125°C
VGS = 20V
VGS = –20V
4.9
–
–
–
–
– – mhos
– 25 µA
– 250 µA
– 100 nA
– –100 nA
Total Gate Charge
Gate–to–Source Charge
Gate–to–Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Qg
Qgs
Qgd
td(on)
tr
ID = 8A, VDS = 400V, VGS = 10V,
Note 4
VDD = 250V, ID = 8A, RG = 9.1Ω,
RD = 31Ω, Note 4
– – 63 nC
– – 9.3 nC
– – 32 nC
– 14 – ns
– 23 – ns
Turn–Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
td(off)
– 49 – ns
tf – 20 – ns
LD Between lead, .250in. (6.0) mm from – 4.5 – nH
LS package and center of die contact – 7.5 – nH
Input Capacitance
Output Capacitance
Reverse Transfer Capaticance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
– 1300
– 310
– 120
–
–
–
pF
pF
pF
Source–Drain Ratings and Characteristics:
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
IS
ISM Note 2
VSD TJ = +25°C, IS = 8A, VGS = 0V,
Note 4
–– 8 A
– – 32 A
– – 2.0 V
Reverse Recovery Time
Reverse Recovery Charge
trr TJ = +25°C, IF = 8A,
Qrr di/dt = 100A/µs, Note 4
– 460 970 ns
– 4.2 8.9 µC
Forward Turn–On Time
ton Intrinsic turn–on time is neglegible (turn–on is dominated by LS+LD)
Note 2. Repetitive rating; pulse width limited by maximum junction temperature.
Note 4. Pulse width ≤ 300µs; duty cycle ≤ 2%.
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.147 (3.75)
Dia Max
.420 (10.67)
Max
Drain
.110 (2.79)
.500
(12.7)
Max
.070 (1.78) Max
Gate
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Min
Source
Drain
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