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Número de pieza | NTE2401 | |
Descripción | Silicon PNP Transistor RF Stages in FM Front Ends | |
Fabricantes | NTE | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de NTE2401 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! NTE2401
Silicon PNP Transistor
RF Stages in FM Front Ends
Description:
The NTE2401 is a silicon PNP transistor in a plastic SOT–23 type surface mount package designed
for use in RF stages in FM front–ends in common base configuration for SMD applications.
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
DC Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA
Total Power Dissipation (TA ≤ +25°C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 430K/W
Note 1. Mounted on a ceramic substrate of .314 (8mm) x .393 (10mm) x .027 (0.7mm).
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Cutoff Current
Emitterr Cutoff Current
Base Current
Base–Emitter Voltage
Transition Frequency
Feedback Capacitance
Noise Factor
ICBO VCB = 30V, IE = 0
– – 50 nA
IEBO VEB = 4V, IC = 0
– – 10 µA
IB VCE = 10V, IC = 4mA
– 80 160 µA
VCE = 10V, IC = 1mA
– 22 – µA
VBE VCE = 10V, IC = 4mA
– 0.76 – V
fT VCE = 10V, IC = 1mA
– 350 – MHz
VCE = 10V, IC = 4mA
– 450 – MHz
VCE = 10V, IC = 8mA
– 440 – MHz
Crb VCE = 10V, VEB = 0
– 0.1 – pF
F VCE = 10V, IC = 2mA, Gs = 16.7mS – 3.0 – dB
VCE = 10V, IC = 5mA, Gs = 6.7mS, – 3.5 – dB
jBs = 5mS
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet NTE2401.PDF ] |
Número de pieza | Descripción | Fabricantes |
NTE240 | Silicon Complementary Transistors | NTE |
NTE2401 | Silicon PNP Transistor RF Stages in FM Front Ends | NTE |
NTE2402 | Silicon Complementary Transistors Low Noise / UHF/VHF Amplifier | NTE |
NTE2403 | Silicon Complementary Transistors | NTE |
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