DataSheet26.com

NTE2416 PDF даташит

Спецификация NTE2416 изготовлена ​​​​«NTE» и имеет функцию, называемую «Silicon Complementary Transistors High Current General Purpose Amp/Switch».

Детали детали

Номер произв NTE2416
Описание Silicon Complementary Transistors High Current General Purpose Amp/Switch
Производители NTE
логотип NTE логотип 

2 Pages
scroll

No Preview Available !

NTE2416 Даташит, Описание, Даташиты
NTE2416 (NPN) & NTE2417 (PNP)
Silicon Complementary Transistors
Digital w/2 Built–In Bias 22k Resistors
(Surface Mount)
Features:
D Built–In Bias Resistors
D Small SOT–23 Surface Mount Package
Applications:
D Switching Circuits
D Inverters
D Interface Circuits
D Driver
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
ICBO VCB = 40V, IE = 0
ICEO VCE = 40V, IB = 0
Emitter Cutoff Current
IEBO VEB = 5V, IC = 0
DC Current Gain
hFE VCE = 5V, IC = 10mA
Collector–Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0
Collector–Emitter Breakdown Voltage V(BR)CBO IC = 100µA, RBE =
Collector–Emitter Saturation Voltage VCE(sat) IC = 10mA, IB = 0.5mA
Current Gain–Bandwidth Product
NTE2416
fT
VCE = 10V, IC = 5mA
NTE2417
Min Typ Max Unit
– – 0.1 µA
– – 0.5 µA
70 113 150 µA
50 – –
50 – – V
50 – – V
– 0.1 0.3 V
– 250 – MHz
– 200 – MHz









No Preview Available !

NTE2416 Даташит, Описание, Даташиты
Electrical Characteristics (Contd): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Output Capacitance
NTE2416
NTE2417
Cob
VCB = 10V, f = 1MHz
3.5 pF
5.3 pF
Input OFF Voltage
Input ON Voltage
Input Resistance
Input Resistance Ratio
VI(off)
VI(on)
R1
R1/R2
VCE = 5V, IC = 100µA
VCE = 0.2V, IC = 10mA
0.8 1.1 1.5 V
1.0 1.9 3.0 V
15 22 29 k
0.9 1.0 1.1
Output
NPN
PNP Output
Input
Input
GND
.016 (0.48)
GND
C .098
(2.5)
B E Max
.074 (1.9)
.118 (3.0) Max
.037 (0.95)
.043 (1.1)
.051
(1.3)
.007 (0.2)










Скачать PDF:

[ NTE2416.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NTE241Silicon Complementary Transistors Audio Power Amplifier / SwitchNTE
NTE
NTE2410Silicon NPN Transistor High Voltage Amp/Driver (Comp to NTE2411)NTE
NTE
NTE2411Silicon PNP Transistor High Voltage Amp/Driver (Compl to NTE2410)NTE
NTE
NTE2412Silicon NPN Transistor General Purpose / High Voltage Amp / (Compl to NTE2413)NTE
NTE

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск