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NTE2431 PDF даташит

Спецификация NTE2431 изготовлена ​​​​«NTE» и имеет функцию, называемую «Silicon PNP Transistor High Voltage Amp/Switch (Compl to NTE2430)».

Детали детали

Номер произв NTE2431
Описание Silicon PNP Transistor High Voltage Amp/Switch (Compl to NTE2430)
Производители NTE
логотип NTE логотип 

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NTE2431 Даташит, Описание, Даташиты
NTE2431
Silicon PNP Transistor
High Voltage Amp/Switch
(Compl to NTE2430)
Description:
The NTE2431 is a silicon PNP transistor in a SOT–89 type surface mount package designed for use
in amplifier and switching switching applications.
Absolute Maximum Ratings:
Collector–Base Voltage (Open Emitter), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V
Collector–Emitter Voltage (Open Base), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Emitter–Base Voltage (Open Collector), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
DC Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Power Dissipation (TA +25°C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 125K/W
Thermal Resistance, Junction–to–Tab, RthJTAB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10K/W
Note 1. Device mounted on a ceramic substrate; area = 2.5cm2, thickness = 0.7mm.
Electrical Characteristics: (TJ = +25°C unles otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
Collector–Emitter Breakdown Voltage
Collector–Emitter Saturation Voltage
DC Current Gain
Collector Capacitance
Transitional Frequency
ICBO VCB = 280V, IE = 0
ICEO VCE = 250V, IB = 0
IEBO VEB = 6V, IC = 0
V(BR)CEO IC = 50mA, IB = 0, L = 25mH
VCE(sat) IC = 50mA, IB = 5mA
hFE VCE = 10V, IC = 50mA
Cc IE = Ie = 0, VCB = 10, f = 1MHz
fT VCE = 10V, IC = 10mA, f = 30MHz
Min Typ Max Unit
– – 1 µA
– – 50 µA
– – 20 µA
300 – – V
––2V
30 – 120
– – 15 pF
15 –
– MHz









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NTE2431 Даташит, Описание, Даташиты
.059 (1.5)
.174 (4.42)
.067 (1.7)
.015 (0.32)
ECB
.020 (.508)
.059 (1.5)
.118 (3.0)
Bottom View
.096
(2.46)
.161
(4.1)
.041
(1.05)
Min










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Номер в каталогеОписаниеПроизводители
NTE243Silicon Complementary Transistors Darlington Power AmplifierNTE
NTE
NTE2430Silicon NPN Transistor High Voltage Amp/Switch (Compl to NTE2431)NTE
NTE
NTE2431Silicon PNP Transistor High Voltage Amp/Switch (Compl to NTE2430)NTE
NTE

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