DataSheet26.com

NTE2558 PDF даташит

Спецификация NTE2558 изготовлена ​​​​«NTE» и имеет функцию, называемую «Silicon NPN Transistor Darlington / High Voltage / High Speed Switch w/ Damper Diode».

Детали детали

Номер произв NTE2558
Описание Silicon NPN Transistor Darlington / High Voltage / High Speed Switch w/ Damper Diode
Производители NTE
логотип NTE логотип 

2 Pages
scroll

No Preview Available !

NTE2558 Даташит, Описание, Даташиты
NTE2558
Silicon NPN Transistor
Darlington, High Voltage, High Speed Switch
w/ Damper Diode
Features:
D High Reliability
D High Collector–Base Breakdown Voltage
D On–Chip Damper Diode
Applications:
D High–Voltage, High–Power Switching
D Induction Cookers
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Base Current. IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector–Emitter Sustaining Voltage
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Collector–Base Breakdown Voltage
ICBO VCB = 800V, IE = 0
IEBO VEB = 5V, IC = 0
hFE VCE = 5V, IC = 15A
VCEO(sus) IC = 100mA
VCE(sat) IC = 15A, IB = 0.75A
VBE(sat) IC = 15A, IB = 0.75A
V(BR)CBO IC = 5mA, IE = 0
Diode Forward Voltage
Fall Time
VF IEC = 15A
tf IC = 15A, IB1 = 1A,
IB2 = –5A, VCC = 200V,
RL = 13.3
Min Typ Max Unit
– – 0.1 mA
– – 600 mA
25 – –
800 – – V
– – 3.0 V
– – 2.5 V
150 –
0
–V
– – 2.0 V
– – 2.0 µs









No Preview Available !

NTE2558 Даташит, Описание, Даташиты
Schematic Diagram
C
B
E
.236
(6.0)
.810(20.57)
Max
.137 (3.5)
Dia Max
.204 (5.2)
1.030
(26.16)
.098
(2.5)
.787
(20.0)
.215 (5.45)
.040 (1.0)
.023
(0.6)
BCE
Note: Collector connected to heat sink.










Скачать PDF:

[ NTE2558.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NTE255Silicon NPN Transistor Horizontal Driver / AmpNTE
NTE
NTE2550Silicon NPN Transistor Darlington Driver / SwitchNTE
NTE
NTE2551Silicon Complementary Transistors Darlington Driver / SwitchNTE
NTE
NTE2552Silicon Complementary TransistorsNTE
NTE

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск