NTE27 PDF даташит
Спецификация NTE27 изготовлена «NTE» и имеет функцию, называемую «Germanium PNP Transistor High Current / High Gain Amp». |
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Детали детали
Номер произв | NTE27 |
Описание | Germanium PNP Transistor High Current / High Gain Amp |
Производители | NTE |
логотип |
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NTE27
Germanium PNP Transistor
High Current, High Gain Amp
Description:
The NTE27 is a PNP germanium power transistor designed for high current applications requiring
high–gain and low saturation voltages.
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +110°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +110°C
Thermal Resistance, Junction to Case, RΘJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +0.5°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1A, IB = 0, Note 1
45 – – V
Collector–Emitter Breakdown Voltage V(BR)CES IC = 300mA, VBE = 0
60 – – V
Floating Potential
VEBF VCB = 60V, IE = 0
– – 0.5 V
Collector Cutoff Current
ICEX
VCE = 45V, VBE(off) = 2V,
TC = +71°C
– – 15 mA
ICBO VCB =60V, IE = 0
– – 4 mA
Emitter Cutoff Current
IEBO VBE = 30V, IC = 0
– – 4 mA
VBE = 30V, IC = 0, TC = +71°C – – 15 mA
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Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Small Signal Characteristics
hFE
VCE(sat)
VBE(sat)
IC = 15A, VCE = 2V, Note 1
IC = 60A, VCE = 2V, Note 1
IC = 15A, IB = 1A, Note 1
IC = 60A, IB = 6A, Note 1
IC = 15A, IB = 1A, Note 1
IC = 60A, IB = 6A, Note 1
60 – 180
15 – –
– – 0.15 V
– – 0.3 V
– – 0.6 V
– – 1.0 V
Common–Emitter Cutoff Frequency
fαe IC = 15A, VCE = 2V
2 – – kHz
Note 1. To avoid excessive heating of the collector junction, perform test with pulse method.
.350 (8.89)
.135 (3.45) Max
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
.040 (1.02)
Emitter
1.187 (30.16)
.215 (5.45)
.430
(10.92)
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case
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DataSheet26.com | 2020 | Контакты | Поиск |