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NTE2764 PDF даташит

Спецификация NTE2764 изготовлена ​​​​«NTE» и имеет функцию, называемую «Integrated Circuit NMOS / 64K Erasable EPROM / 200ns».

Детали детали

Номер произв NTE2764
Описание Integrated Circuit NMOS / 64K Erasable EPROM / 200ns
Производители NTE
логотип NTE логотип 

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NTE2764 Даташит, Описание, Даташиты
NTE2764
Integrated Circuit
NMOS, 64K Erasable EPROM, 200ns
Description:
The NTE2764 is a 65,536–bit (8192 X 8 bit) Ultraviolet Erasable and Electrically Programmable
Read–Only Memory (EPROM) in a 28–Lead DIP type package which operates from a single +5V sup-
ply, making it ideal for microprocessor applications. It features an output enable control and offers
a standby mode with an attendant 67% savings in power consumption.
A distinctive feature of the NTE2764 is a separate output control, output enable (OE) from the chip
enable control (CE). The OE control eliminates bus contention in multiple–bus microprocessor sys-
tems. The NTE2764 features fast, simple one–pulse programming controlled by TTL–level signals.
Total programming time for all 65,536 bits is 420 seconds.
Features:
D Ultraviolet Erasable and Electrically Programmable
D Access Time: 250ns Max
D Single Location Programming
D Programmable with Single Pulse
D Low Power Dissipation: 150mA Max (Active Current)
50mA Max (Standby Current)
D Input/Output TTL Compatible for Reading and Programming
D Single +5V Power Supply
D Three–State Outputs
Absolute Maximum Ratings: (TA = +25°C, Note 1 unless otherwise specified)
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.6 to +6V
Supply Voltage, VPP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.6 to +22V
Output Voltage, VOUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.6 to +6V
Input Voltage, VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.6 to +6V
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –10°C to +80°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to +125°C
Note 1. Exposing the device to stresses above those listed in Absolute Maximum Ratings could
cause permanent damage. The device is not meant to be operated under conditions outside
the limits described in the operational sections of this specification. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.









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NTE2764 Даташит, Описание, Даташиты
DC Electrical Characteristics: (VCC = +5V ±5% unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ
Read Mode and Standby Mode (TA = 0° to +70°C)
Output High Voltage
VOH IOH = 400µA
Output Low Voltage
VOL IOL = 2.1mA
Input High Voltage
VIH
2.4
––
2.0
Input Low Voltage
VIL
0.1
Output Leakage Current
ILO VOUT = 5.25V
––
Input Leakage Current
VCC Current
Standby
ILI VIN = 5.25V
ICC1 CE = VIH
––
––
Active
ICC2 OE = CE = VIL
Program, Program Verify, and Program Inhibit Mode (TA = +25° ±5°C, VPP = +21V ±0.5V)
Input High Voltage
VIH
2.0
Input Low Voltage
VIL
0.1
Input Leakage Current
Output High Voltage
ILI
VOH
VIN = VIL or VIN
IOH = 400µA
––
2.4
Output Low Voltage
VCC Current
VPP Current
VOL IOL = 2.1mA
ICC
IPP CE = VIL, PGM = VIL
––
––
––
Max Unit
0.45
VCC +1
+0.8
10
10
V
V
V
V
µA
µA
50 mA
150 mA
VCC +1
+0.8
10
0.45
150
30
V
V
µA
V
V
mA
mA
AC Electrical Characteristics: (VCC = +5V ±5% unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Read Mode and Standby Mode (TA = 0° to +70°C, Note 2)
Address to Output Delay
tACC CE = OE = VIL
– – 250 ns
CE to Output Delay
tCE OE = VIL
– – 250 ns
Output Enable to Output Delay
tOE CE = VIL
10 100 ns
Output Enable High to Output Float
tDF CE = VIL
0 90 ns
Address to Output Hold
tOH CE = OE = VIL
Read Mode and Standby Mode (TA = +25°C ±5°C, VPP = +21V ±5V, Note 3)
Address Setup Time
tAS
0 – – ns
2 – – µs
OE Setup Time
tOES
2 – – µs
Note 2. Test Conditions:
Output Load: 1 TTL gate and CL = 100pF
Input Rise and fall Times: 20ns
Input Pulse Levels: 0.8V to 2.2V
Timing Measurement Reference Level:
Inputs: 1.0V and 2.0V
Outputs: 0.8V and 2.0V
Note 3. Test Conditions:
Input Pulse Levels: 0.8V to 2.2V
Input Timing Reference Level: 1.0V and 2.0V
Output Timing Reference Level: 0.8V and 2.0V
Input Rise and fall Times: 20ns









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NTE2764 Даташит, Описание, Даташиты
AC Electrical Characteristics (Cont’d): (VCC = +5V ±5% unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Read Mode and Standby Mode (Cont’d) (TA = +25°C ±5°C, VPP = +21V ±5V, Note 3)
Data Setup Time
tDS
Address Hold Time
tAH
CE Setup Time
tCES
Data Hold Time
tDH
Chip Enable to Output Float Delay
tDF
Data Valid from OE
tOE
Program Pulse Width
tPW
VPP Setup Time
tVS
2
0
2
2
0
45
2
– – µs
– – µs
– – µs
– – µs
130 ns
150 ns
50 55 ms
– – µs
Note 3. Test Conditions:
Input Pulse Levels: 0.8V to 2.2V
Input Timing Reference Level: 1.0V and 2.0V
Output Timing Reference Level: 0.8V and 2.0V
Input Rise and fall Times: 20ns
Capacitance: (TA = +25°C, f = 1MHz unless otherwise specified)
Parameter
Symbol
Test Conditions
Input Capacitance
Output Capacitance
CIN
COUT
VIN = 0V
VOUT = 0V
Min Typ Max Unit
– – 6 pF
– – 12 pF
Mode Selection: (Note 4)
Mode
Read
Stanby
Program
Program Verify
Program Inhibit
Note 4. X can be either VIL or VIH.
CE
VIL
VIH
VIL
VIL
VIH
OE
PGM
VPP
VCC
O0 – O7
VIL
VIH
VCC
VCC
DOUT
X X VCC VCC High Z
X
VIL
VPP
VCC
DIN
VIL
VIH
VPP
VCC
DOUT
X X VPP VCC High Z
Function:
The NTE2764 operates from a single +5V power supply, making it ideal for microprocessor applications.
Programming of the NTE2764 is achieved with a single 50ms TTL pulse. Total programming time for
all 65,536 bits is 420 sec. Due to the simplicity of the programming requirements, devices on boards
and in systems may be easily programmed without any special programmer.
The NTE2764 features a standby mode which reduces the power dissipation from a maximum active
power dissipation of 788mW to a maximum standby power dissipation of 262mW. This results in a
67% savings with no increase in access time.
Erasure of the NTE2764 programmed data can be attained when exposed to light with wavelengths
shorter than approximately 4,000 Angstroms. It should be noted that constant exposure to direct sun-
light or room level fluorescent lighting could erase the NTE2764. Consequently, if the NTE2764 is
to be exposed to these types of lighting conditions for long periods of time, its window should be
masked to prevent unintentional erasure.










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