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NTE2946 PDF даташит

Спецификация NTE2946 изготовлена ​​​​«NTE» и имеет функцию, называемую «MOSFET N-Channel / Enhancement Mode High Speed Switch».

Детали детали

Номер произв NTE2946
Описание MOSFET N-Channel / Enhancement Mode High Speed Switch
Производители NTE
логотип NTE логотип 

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NTE2946 Даташит, Описание, Даташиты
NTE2946
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Features:
D Low Static Drain–Source ON Resistance
D Improved Inductive Ruggedness
D Fast Switching Times
D Low Input Capacitance
D Extended Safe Operating Area
D Improved High Temperature Reliability
D TO220 Type Isolated Package
Absolute Maximum Ratings:
Drain–Source Voltage (Note 1), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Drain–Gate Voltage (RGS = 1M, Note 1), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
Drain Current, ID
Continuous
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.6A
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2A
Pulsed (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32A
Gate Current (Pulsed), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±1.5A
Single Pulsed Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161mJ
Avalanche Current, IAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.6A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . +300°C
Thermal Resistance:
Maximum Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.12K/W
Typical Case–to–Sink (Mounting surface flat, smooth, and greased), RthCS . . . . . . . 0.5K/W
Maximum Junction–to–Ambient (Free Air Operation), RthJA . . . . . . . . . . . . . . . . . . . . 62.5K/W
Note 1. TJ = +25° to +150°C.
Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 3. L = 14mH, VDD = 50V, RG = 25, Starting TJ = +25°C.









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NTE2946 Даташит, Описание, Даташиты
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DrainSource Breakdown Voltage BVDSS VGS = 0v, ID = 250µA
500 – – V
Gate Threshold Voltage
VGS(th) VDS = VGS, ID = 250µA
2.0 4.0 V
GateSource Leakage Forward
IGSS VGS = 20V
– – 100 nA
GateSource Leakage Reverse
IGSS VGS = 20V
– – –100 nA
Zero Gate Voltage Drain Current
IDSS VDS = Max. Rating, VGS = 0
– – 250 µA
VDS = 0.8 Max. Rating, TC = +125°C
– – 1000 µA
Static DrainSource ON Resistance RDS(on) VGS = 10V, ID = 4A, Note 4
– – 0.85
Forward Transconductance
gfs VDS 50V, ID = 4A, Note 4
4.0 6.5 mhos
Input Capacitance
Ciss VGS = 0V, VDS = 25V, f = 1MHz
1510 pF
Output Capacitance
Coss
154 pF
Reverse Transfer Capacitance
Crss
66 pF
TurnOn Delay Time
Rise Time
TurnOff Delay Time
td(on)
tr
td(off)
VDD = 0.5 BVDSS, ID = 8A, ZO = 9.1,
(MOSFET switching times are essentially
independent of operating temperature)
14 21
23 35
49 74
ns
ns
ns
Fall Time
tf
20 30 ns
Total Gate Charge
(GateSource Plus GateDrain)
GateSource Charge
GateDrain (Miller) Charge
Qg VGS = 10V, ID = 8A, VDS = 0.8 Max.
Qgs
Rating, (Gate charge is essentially
independent of operating temperature)
Qgd
– – 74 nC
9 nC
27 nC
SourceDrain Diode Ratings and Characteristics
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
IS (Body Diode)
ISM (Body Diode) Note 2
VSD TJ = +25°C, IS = 8A, VGS = 0V, Note 4
trr TJ = +25°C, IF = 8A, dIF/dt = 100A/µs
–– 8 A
– – 32 A
–– 2 V
460 970 ns
Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.









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NTE2946 Даташит, Описание, Даташиты
.402 (10.2) Max
.224 (5.7) Max
.295
(7.5)
.669
(17.0)
Max
GD S
.531
(13.5)
Min
.122 (3.1)
Dia
.165
(4.2)
.100 (2.54)
.059 (1.5) Max
.173 (4.4)
Max
.114 (2.9)
Max










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