NTE2946 PDF даташит
Спецификация NTE2946 изготовлена «NTE» и имеет функцию, называемую «MOSFET N-Channel / Enhancement Mode High Speed Switch». |
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Детали детали
Номер произв | NTE2946 |
Описание | MOSFET N-Channel / Enhancement Mode High Speed Switch |
Производители | NTE |
логотип |
3 Pages
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NTE2946
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Features:
D Low Static Drain–Source ON Resistance
D Improved Inductive Ruggedness
D Fast Switching Times
D Low Input Capacitance
D Extended Safe Operating Area
D Improved High Temperature Reliability
D TO220 Type Isolated Package
Absolute Maximum Ratings:
Drain–Source Voltage (Note 1), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Drain–Gate Voltage (RGS = 1MΩ, Note 1), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
Drain Current, ID
Continuous
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.6A
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2A
Pulsed (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32A
Gate Current (Pulsed), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±1.5A
Single Pulsed Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161mJ
Avalanche Current, IAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.6A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . +300°C
Thermal Resistance:
Maximum Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.12K/W
Typical Case–to–Sink (Mounting surface flat, smooth, and greased), RthCS . . . . . . . 0.5K/W
Maximum Junction–to–Ambient (Free Air Operation), RthJA . . . . . . . . . . . . . . . . . . . . 62.5K/W
Note 1. TJ = +25° to +150°C.
Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 3. L = 14mH, VDD = 50V, RG = 25Ω, Starting TJ = +25°C.
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Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Drain–Source Breakdown Voltage BVDSS VGS = 0v, ID = 250µA
500 – – V
Gate Threshold Voltage
VGS(th) VDS = VGS, ID = 250µA
2.0 – 4.0 V
Gate–Source Leakage Forward
IGSS VGS = 20V
– – 100 nA
Gate–Source Leakage Reverse
IGSS VGS = –20V
– – –100 nA
Zero Gate Voltage Drain Current
IDSS VDS = Max. Rating, VGS = 0
– – 250 µA
VDS = 0.8 Max. Rating, TC = +125°C
– – 1000 µA
Static Drain–Source ON Resistance RDS(on) VGS = 10V, ID = 4A, Note 4
– – 0.85 Ω
Forward Transconductance
gfs VDS ≥ 50V, ID = 4A, Note 4
4.0 6.5 – mhos
Input Capacitance
Ciss VGS = 0V, VDS = 25V, f = 1MHz
– 1510 – pF
Output Capacitance
Coss
– 154 – pF
Reverse Transfer Capacitance
Crss
– 66 – pF
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
td(on)
tr
td(off)
VDD = 0.5 BVDSS, ID = 8A, ZO = 9.1Ω,
(MOSFET switching times are essentially
independent of operating temperature)
–
–
–
14 21
23 35
49 74
ns
ns
ns
Fall Time
tf
– 20 30 ns
Total Gate Charge
(Gate–Source Plus Gate–Drain)
Gate–Source Charge
Gate–Drain (“Miller”) Charge
Qg VGS = 10V, ID = 8A, VDS = 0.8 Max.
Qgs
Rating, (Gate charge is essentially
independent of operating temperature)
Qgd
– – 74 nC
– 9 – nC
– 27 – nC
Source–Drain Diode Ratings and Characteristics
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
IS (Body Diode)
ISM (Body Diode) Note 2
VSD TJ = +25°C, IS = 8A, VGS = 0V, Note 4
trr TJ = +25°C, IF = 8A, dIF/dt = 100A/µs
–– 8 A
– – 32 A
–– 2 V
– 460 970 ns
Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
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.402 (10.2) Max
.224 (5.7) Max
.295
(7.5)
.669
(17.0)
Max
GD S
.531
(13.5)
Min
.122 (3.1)
Dia
.165
(4.2)
.100 (2.54)
.059 (1.5) Max
.173 (4.4)
Max
.114 (2.9)
Max
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