NTE2969 PDF даташит
Спецификация NTE2969 изготовлена «NTE» и имеет функцию, называемую «MOSFET N-Channel / Enhancement Mode High Speed Switch». |
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Детали детали
Номер произв | NTE2969 |
Описание | MOSFET N-Channel / Enhancement Mode High Speed Switch |
Производители | NTE |
логотип |
3 Pages
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NTE2969
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Features:
D Avalanche Rugged Technology
D Rugged Gate Oxide Technology
D Low Input Capacitance
D Improved Gate Charge
D Extended Safe Operating Area
D Lower Leakage Current
D Low Static Drain–Source On–State Resistance
Absolute Maximum Ratings:
Drain–Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Drain Current, ID
Continuous
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15.1A
Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
Gate Current (Pulsed), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±1.5A
Single Pulsed Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1429mJ
Avalanche Current (Note 1), IAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27.8mJ
Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0V/ns
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 278W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.22W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . +300°C
Thermal Resistance:
Maximum Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.45°C/W
Typical Case–to–Sink, RthCS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.24°C/W
Maximum Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40°C/W
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2. L = 4mH, IAS = 25A, VDD = 50V, RG = 27Ω, Starting TJ = +25°C.
Note 3. ISD ≤ 25A, di/dt ≤ 320A/µs, VDD ≤ BVDSS, Starting TJ = +25°C.
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Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Drain–Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA
Breakdown Voltage Temperature DBV/DTJ ID = 250µA
Coefficient
Gate Threshold Voltage
VGS(th) VDS = 5V, ID = 250µA
Gate–Source Leakage Forward
IGSS VGS = 30V
Gate–Source Leakage Reverse
IGSS VGS = –30V
Zero Gate Voltage Drain Current
IDSS VDS = 400V, VGS = 0
VDS = 320V, TC = +150°C
Static Drain–Source ON Resistance RDS(on) VGS = 10V, ID = 12.5A, Note 4
Forward Transconductance
gfs VDS = 50V, ID = 12.5A, Note 4
Input Capacitance
Ciss VGS = 0V, VDS = 25V, f = 1MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn–On Delay Time
Rise Time
td(on)
tr
VDD = 200V, ID = 25A, RG = 5.3Ω,
Note 4, Note 5
Turn–Off Delay Time
td(off)
Fall Time
tf
Total Gate Charge
Gate–Source Charge
Qg VGS = 10V, ID = 25A, VDS = 320V,
Qgs Note 4, Note 5
Gate–Drain (“Miller”) Charge
Qgd
Source–Drain Diode Ratings and Characteristics
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IS (Body Diode)
ISM (Body Diode) Note 1
VSD TJ = +25°C, IS = 25A, VGS = 0V, Note 4
trr TJ = +25°C, IF = 25A, dIF/dt = 100A/µs
Qrr
Min Typ Max Unit
400 – – V
– 0.20 – V/°C
2.0 – 4.0 V
– – 100 nA
– – –100 nA
– – 10 µA
– – 100 µA
– – 0.2 Ω
– 18.91 – mhos
– 3180 4130 pF
– 435 500 pF
– 200 240 pF
– 22 55 ns
– 22 60 ns
– 127 260 ns
– 38 85 ns
– 140 182 nC
– 21 – nC
– 64.8 – nC
– – 25 A
– – 100 A
– – 1.5 V
– 484 – ns
– 7.6 – µC
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width ≤ 250µs, Duty Cycle ≤ 2%.
Note 5. Essentially independent of operating temperature.
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.190 (4.82)
.615 (15.62)
.787
(20.0)
.591
(15.02)
.126 (3.22) Dia
.787
(20.0)
G DS
.215 (5.47)
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