NTE2970 PDF даташит
Спецификация NTE2970 изготовлена «NTE» и имеет функцию, называемую «MOSFET N-Channel / Enhancement Mode High Speed Switch». |
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Детали детали
Номер произв | NTE2970 |
Описание | MOSFET N-Channel / Enhancement Mode High Speed Switch |
Производители | NTE |
логотип |
2 Pages
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NTE2970
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Applications:
D SMPS
D DC–DC Converter
D Battery Charger
D Power Supply of Printer
D Copier
D HDD, FDD, TV, VCR
D Personal Computer
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Drain–Source Voltage (VGS = 0V), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Gate–Source Voltage (VDS = 0V), VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
Drain Current, ID
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66A
Maximum Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 275W
Channel Temperature Range, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Channel–to–Case, Rth(ch–c) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.45°C/W
Electrical Characteristics: (Tch = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Drain–Source Breakdown Voltage
Gate–Source Breakdown Voltage
Gate–Source Leakage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Static Drain–Source ON Resistance
Drain–Source On–State Voltage
Forward Transfer Admittance
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(th)
RDS(on)
VDS(on)
|yfs|
VDS = 0V, ID = 1mA
VDS = 0V, IG = ±100µA
VGS = ±25V, VDS = 0V
VDS = 500V, VGS = 0
VDS = 10V, ID = 1mA
VGS = 10V, ID = 11A
VGS = 10V, ID = 11A
VGS = 10V, ID = 11A
Min Typ Max Unit
500 – – V
±30 – – V
– – ±10 µA
– – 1.0 mA
2.0 3.0 4.0 V
– 0.22 0.29 Ω
– 2.4 3.2 V
7 10 –
S
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Electrical Characteristics (Cont’d): (Tch = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
– 2800
– 350
– 55
–
–
–
pF
pF
pF
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Diode Forward Voltage
td(on)
tr
td(off)
tf
VSD
VDD = 200V, ID = 11A, VGS = 10V,
RGEN = RGS = 50Ω
IS = 11A, VGS = 0V
– 60 – ns
– 80 – ns
– 270 – ns
– 80 – ns
– 1.5 2.0 V
.190 (4.82)
.615 (15.62)
.787
(20.0)
.591
(15.02)
.126 (3.22) Dia
.787
(20.0)
G DS
.215 (5.47)
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DataSheet26.com | 2020 | Контакты | Поиск |