NTE2985 PDF даташит
Спецификация NTE2985 изготовлена «NTE» и имеет функцию, называемую «Logic Level MOSFET N-Channel / Enhancement Mode High Speed Switch». |
|
Детали детали
Номер произв | NTE2985 |
Описание | Logic Level MOSFET N-Channel / Enhancement Mode High Speed Switch |
Производители | NTE |
логотип |
3 Pages
No Preview Available ! |
NTE2985
Logic Level MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Features:
D Dynamic dv/dt Rating
D Logic Level Gate Drive
D RDS(on) Specified at VGS = 4V & 5V
D +175°C Operating Temperature
D Fast Switching
D Ease of Paralleling
D Simple Drive Requirements
Absolute Maximum Ratings:
Drain Current, ID
Continuous (VGS = 5V)
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21A
Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.59W/°C
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10V
Single Pulsed Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220mJ
Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V/ns
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C
Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), TL . . . . . . . . . . +300°C
Mounting Torque, 6–32 or M3 Screw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbf•in (1.1 N•m)
Thermal Resistance:
Maximum Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7K/W
Typical Case–to–Sink (Mounting surface flat, smooth, and greased), RthCS . . . . . . . 0.5K/W
Maximum Junction–to–Ambient (Free Air Operation), RthJA . . . . . . . . . . . . . . . . . . . . . 62K/W
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2. L = 285µH, VDD = 25V, RG = 25Ω, Starting TJ = +175°C, IAS = 30A.
Note 3. ISD ≤ 30A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, TJ ≤ +175°C.
No Preview Available ! |
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Drain–Source Breakdown Voltage
BVDSS VGS = 0V, ID = 250µA
Breakdown Voltage Temperature
Coefficient
∆V(BR)DSS/ Reference to +25°C, ID = 1mA
∆TJ
Static Drain–Source ON Resistance RDS(on) VGS = 5V, ID = 18A, Note 4
VGS = 4V, ID = 15A, Note 4
Gate Threshold Voltage
VGS(th) VDS = VGS, ID = 250µA
Forward Transconductance
gfs VDS ≥ 25V, ID = 18A, Note 4
Drain–to–Source Leakage Current
IDSS VDS = 60V, VGS = 0
VDS = 48V, VGS = 0V, , TC = +150°C
Gate–Source Leakage Forward
IGSS VGS = 10V
Gate–Source Leakage Reverse
IGSS VGS = –10V
Total Gate Charge
Qg VGS = 5V, ID = 30A, VDS = 48V
Gate–Source Charge
Qgs
Gate–Drain (“Miller”) Charge
Qgd
Turn–On Delay Time
Rise Time
td(on)
tr
VDD = 30V, ID = 30A, RG = 6.0Ω,
RD = 1.0Ω
Turn–Off Delay Time
td(off)
Fall Time
tf
Internal Drain Inductance
Internal Source Inductance
LD Between lead, 6mm (0.25”) from
LS package and center of die contact
Input Capacitance
Ciss VGS = 0V, VDS = 25V, f = 1MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Source–Drain Diode Ratings and Characteristics
60 – – V
– 0.07 – V/°C
– – 0.05 Ω
– – 0.07 Ω
1.0 – 2.0 V
12 – – mhos
– – 25 µA
– – 250 µA
– – 100 nA
– – –100 nA
– – 35 nC
– – 7.1 nC
– – 25 nC
– 14 – ns
– 170 – ns
– 30 – ns
– 56 – ns
– 4.5 – nH
– 7.5 – nH
– 1600 – pF
– 660 – pF
– 170 – pF
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn–On Time
IS (Body Diode)
– – 30 A
ISM (Body Diode) Note 1
– – 110 A
VSD TJ = +25°C, IS = 30A, VGS = 0V, Note 4 – – 1.6 V
trr
TJ = +25°C, IF = 30A, di/dt = 100A/µs,
– 120 180 ns
Qrr Note 4
– 0.7 1.3 µC
ton Intrinsic turn–on time is neglegible
(turn–on is dominated by LS + LD)
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
No Preview Available ! |
.147 (3.75)
Dia Max
.420 (10.67)
Max
.110 (2.79)
.500
(12.7)
Max
.070 (1.78) Max
Gate
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Min
Source
Drain/Tab
Скачать PDF:
[ NTE2985.PDF Даташит ]
Номер в каталоге | Описание | Производители |
NTE298 | Silicon Complementary Transistors | NTE |
NTE2980 | Logic Level MOSFET N-Channel / Enhancement Mode High Speed Switch | NTE |
NTE2981 | Logic Level MOSFET N-Channel / Enhancement Mode High Speed Switch | NTE |
NTE2984 | Logic Level MOSFET N-Channel / Enhancement Mode High Speed Switch | NTE |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |