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NTE2985 PDF даташит

Спецификация NTE2985 изготовлена ​​​​«NTE» и имеет функцию, называемую «Logic Level MOSFET N-Channel / Enhancement Mode High Speed Switch».

Детали детали

Номер произв NTE2985
Описание Logic Level MOSFET N-Channel / Enhancement Mode High Speed Switch
Производители NTE
логотип NTE логотип 

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NTE2985 Даташит, Описание, Даташиты
NTE2985
Logic Level MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Features:
D Dynamic dv/dt Rating
D Logic Level Gate Drive
D RDS(on) Specified at VGS = 4V & 5V
D +175°C Operating Temperature
D Fast Switching
D Ease of Paralleling
D Simple Drive Requirements
Absolute Maximum Ratings:
Drain Current, ID
Continuous (VGS = 5V)
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21A
Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.59W/°C
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10V
Single Pulsed Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220mJ
Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V/ns
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C
Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), TL . . . . . . . . . . +300°C
Mounting Torque, 6–32 or M3 Screw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfin (1.1 Nm)
Thermal Resistance:
Maximum Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7K/W
Typical Case–to–Sink (Mounting surface flat, smooth, and greased), RthCS . . . . . . . 0.5K/W
Maximum Junction–to–Ambient (Free Air Operation), RthJA . . . . . . . . . . . . . . . . . . . . . 62K/W
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2. L = 285µH, VDD = 25V, RG = 25, Starting TJ = +175°C, IAS = 30A.
Note 3. ISD 30A, di/dt 200A/µs, VDD V(BR)DSS, TJ +175°C.









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NTE2985 Даташит, Описание, Даташиты
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DrainSource Breakdown Voltage
BVDSS VGS = 0V, ID = 250µA
Breakdown Voltage Temperature
Coefficient
V(BR)DSS/ Reference to +25°C, ID = 1mA
TJ
Static DrainSource ON Resistance RDS(on) VGS = 5V, ID = 18A, Note 4
VGS = 4V, ID = 15A, Note 4
Gate Threshold Voltage
VGS(th) VDS = VGS, ID = 250µA
Forward Transconductance
gfs VDS 25V, ID = 18A, Note 4
DraintoSource Leakage Current
IDSS VDS = 60V, VGS = 0
VDS = 48V, VGS = 0V, , TC = +150°C
GateSource Leakage Forward
IGSS VGS = 10V
GateSource Leakage Reverse
IGSS VGS = 10V
Total Gate Charge
Qg VGS = 5V, ID = 30A, VDS = 48V
GateSource Charge
Qgs
GateDrain (Miller) Charge
Qgd
TurnOn Delay Time
Rise Time
td(on)
tr
VDD = 30V, ID = 30A, RG = 6.0,
RD = 1.0
TurnOff Delay Time
td(off)
Fall Time
tf
Internal Drain Inductance
Internal Source Inductance
LD Between lead, 6mm (0.25) from
LS package and center of die contact
Input Capacitance
Ciss VGS = 0V, VDS = 25V, f = 1MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
SourceDrain Diode Ratings and Characteristics
60 – – V
0.07 V/°C
– – 0.05
– – 0.07
1.0 2.0 V
12 – – mhos
– – 25 µA
– – 250 µA
– – 100 nA
– – –100 nA
– – 35 nC
– – 7.1 nC
– – 25 nC
14 ns
170 ns
30 ns
56 ns
4.5 nH
7.5 nH
1600 pF
660 pF
170 pF
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward TurnOn Time
IS (Body Diode)
– – 30 A
ISM (Body Diode) Note 1
– – 110 A
VSD TJ = +25°C, IS = 30A, VGS = 0V, Note 4 – – 1.6 V
trr
TJ = +25°C, IF = 30A, di/dt = 100A/µs,
120 180 ns
Qrr Note 4
0.7 1.3 µC
ton Intrinsic turnon time is neglegible
(turnon is dominated by LS + LD)
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.









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NTE2985 Даташит, Описание, Даташиты
.147 (3.75)
Dia Max
.420 (10.67)
Max
.110 (2.79)
.500
(12.7)
Max
.070 (1.78) Max
Gate
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Min
Source
Drain/Tab










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