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PDF NTE3032 Data sheet ( Hoja de datos )
| Número de pieza | NTE3032 | |
| Descripción | Phototransistor Detector NPN-Si / Visible & IR | |
| Fabricantes | NTE | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de NTE3032 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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NTE3032
Phototransistor Detector
NPN–Si, Visible & IR
Description:
The NTE3032 is a silicon NPN phototransistor detector in a TO18 type package designed for use in
industrial inspection, processing and control, counter, sorter, switching, and logic circuit applications
or any design requiring radiation sensitivity and stable characteristics.
Features:
D Sensitive Throughout Visible and Near Infrared Spectral Range for Wider Application
D Minimum Light Current: 8mH @ H = 5mW/cm2
D External Base for Added Control
D Annular Passivated Structure for Stability and Reliability
D Popular TO18 Type Package for Easy Handling and Mounting
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Collector Voltage, VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Total Device Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static Characteristics
Collector Dark Current
Collector–Base Breakdown Voltage
Emitter–Collector Breakdown Voltage
Optical Characteristics
ICEO
V(BR)CBO
V(BR)ECO
VCC = 10V, H ∼ 0
IC = 100µA
IE = 100µA
– – 100 nA
80 – – V
5––V
Light Current
Photo Current Rise Time
Photo Current Fall Time
IL VCC = 5V, RL = 100Ω, Note 1 8 – – mA
tr RL = 100Ω, IL = 1mA (Peak), – 15 – µs
tf Note 2
– 15 – µs
Note 1. Radiation flux density (H) equal to 5mW/cm2 emitted from a tungsten source at a color
temperature of 2870 K.
Note 2. For unsaturated response time measurement, radiation is provided by pulsed GaAs (gallium
arsenide) light–emitting diode (λ ∼ µm) with a pulse width equal to or greater than 10µs,
IL = 1mA Peak.
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet NTE3032.PDF ] | |
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