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Número de pieza | NTE3045 | |
Descripción | Optoisolator Silicon NPN Darlington Phototransistor Output | |
Fabricantes | NTE | |
Logotipo | ||
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Optoisolator
Silicon NPN Darlington Phototransistor Output
Description:
The NTE3045 is a gallium arsenide LED optically coupled to a Silicon Photo Darlington transistor in
a 6–Lead DIP type package designed for applications requiring electrical isolation, high breakdown
voltage, and high current transfer ratios. Characterized for use as telephone relay drivers but pro-
vides excellent performance in interfacing and coupling systems, phase and feedback controls, solid
state relays, and general purpose switching circuits.
Features:
D High Sensitivity to Low Input Drive Current
D High Collector–Emitter Breakdown Voltage: V(BR)CEO = 80V (Min)
D High Input–Output Isolation Guaranteed: VISO = 7500V (Peak)
Absolute Maximum Ratings: (TA = +25°C, unless otherwise specified)
Input LED
Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Continuous Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA
LED Power Dissipation (TA = +25°C with Negligible Power in Output Detector), PD . . . . . . 120mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.41mW/°C
Output Detector
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Collector Voltage, VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Detector Power Dissipation (TA = +25°C with Negligible Power in Input LED), PD . . . . . . . . 150mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.76mW/°C
Total Device
Isolation Surge Voltage (Peak AC Voltage, 60Hz, 1sec Duration, Note 1), VISO . . . . . . . . . . . 7500V
Total Device Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.94mW/°C
Operating Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Lead Temperature (During Soldering for 10sec, 1/16” from Case), TL . . . . . . . . . . . . . . . . . . +260°C
Note 1. Isolation surge voltage is an internal device dielectric breakdown rating. For this test, Pin1
and Pin2 are common, and Pin4, Pin5, and Pin6 are common.
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet NTE3045.PDF ] |
Número de pieza | Descripción | Fabricantes |
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NTE3041 | Optoisolator NPN Transistor Output | NTE |
NTE3042 | Optoisolator NPN Transistor Output | NTE |
NTE3043 | Optoisolator NPN Transistor Output | NTE |
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