NTE316 Datasheet PDF - NTE
| Part Number | NTE316 | |
| Description | Silicon NPN Transistor High Gain / Low Noise Amp | |
| Manufacturers | NTE | |
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NTE316
Silicon NPN Transistor
High Gain, Low Noise Amp
Features:
D High Current Gain–Bandwidth Product
D Low Noise Figure
D High Power Gain
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Continuous Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.14mW/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
ON Characteristics
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IC = 5mA, IB = 0
IC = 0.1mA, IE = 0
IE = 0.1mA, IC = 0
VCB = 5V, IE = 0
15 – – V
30 – – V
3.5 – – V
– – 10 nA
DC Current Gain
Dynamic Characteristics
hFE VCE = 5V, IC = 2mA
25 – 250
Current Gain–Bandwidth Product
Collector–Base Capacitance
Small–Signal Current Gain
Collector–Base Time Constant
Noise Figure
fT
Ccb
hfe
rb ’Cc
NF
VCE = 5V, IC = 10mA, f = 100MHz
VCB = 10V, IE = 0, f = 1kHz
VCE = 5V, IC = 2mA, f = 1kHz
VCE = 5V, IE = 2mA, f = 31.8MHz
VCE = 5V, IC = 2mA, RS = 50Ω,
f = 450MHz
1400
–
25
2
–
–
0.8
–
–
–
– MHz
1.0 pF
250
12 ps
4.5 dB
Functional Test
Common–Emitter Amplifier Power Gain Gpe VCE = 5V, IC = 2mA, f = 450MHz 15 –
– dB
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for NTE316 electronic component. |
| Information | Total 2 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ NTE316.PDF Datasheet ] | |
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