DataSheet26.com

NTE317 PDF даташит

Спецификация NTE317 изготовлена ​​​​«NTE» и имеет функцию, называемую «Silicon NPN Transistor RF Power Output».

Детали детали

Номер произв NTE317
Описание Silicon NPN Transistor RF Power Output
Производители NTE
логотип NTE логотип 

2 Pages
scroll

No Preview Available !

NTE317 Даташит, Описание, Даташиты
NTE317
Silicon NPN Transistor
RF Power Output
Description:
The NTE317 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF communica-
tions. This device utilizes improved metallization systems to achieve extreme ruggedness under severe
operating conditions.
Features:
D 70W Minimum with Greater than 13.5dB Gain
D Withstands Severe Mismatch under Operating Conditions
D Emitter Ballasted
D Low Inductance Stripline Package
Absolute Maximum Ratings:
Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Maximum Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Total Device Dissipation (+25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220W
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8°C/W
Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Electrical Characteristics:
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 50mA, IB = 0, Note 1
Collector–Emitter Breakdown Voltage V(BR)CES IC = 20mA, VBE = 0, Note 1
Emitter–Base Breakdown Voltage V(BR)EBO IE = 5mA, IC = 0
Collector Cut–Off Current
ICBO VCB = 15V, IE = 0
DC Current Gain
hFE VCE = 5V, IC = 5A
18 –
36 –
4–
––
10 –
–V
–V
–V
3 mA
Gain Bandwidth
Output Capacitance
Amplifier Power Out
Amplifier Power Gain
ft VCE = 13.5V, IC = 100mA
Cob VCB = 12.5V, IC = 0,
–FO = 1.0MHz
PO 30MHz/12.5V
Pg
200 – – MHz
– 300 – pF
70 –
13.5 14.2
W
dB
Note 1. Pulsed through 25mH Inductor









No Preview Available !

NTE317 Даташит, Описание, Даташиты
.250
(6.35)
.225 (5.72)
.725 (18.42)
EC
.127 (3.17) Dia
(2 Holes)
BE
1.061 (26.95)
.480 (12.1) Dia
.065 (1.68)
.975 (24.77)
Ceramic Cap
.260
(6.6)
.095 (2.42)










Скачать PDF:

[ NTE317.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NTE31Silicon Complementary Transistors TV Sound Output / TV Vertical Output / AF Driver OutputNTE
NTE
NTE310Integrated Thyristor/Rectifier (ITR) TV Horizontal Deflection & Trace SwitchNTE
NTE
NTE3100Photon Coupled Interrupter ModuleNTE
NTE
NTE3101Photon Coupled Interrupter Module NPN Darlington OutputNTE
NTE

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск