NTE317 PDF даташит
Спецификация NTE317 изготовлена «NTE» и имеет функцию, называемую «Silicon NPN Transistor RF Power Output». |
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Детали детали
Номер произв | NTE317 |
Описание | Silicon NPN Transistor RF Power Output |
Производители | NTE |
логотип |
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NTE317
Silicon NPN Transistor
RF Power Output
Description:
The NTE317 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF communica-
tions. This device utilizes improved metallization systems to achieve extreme ruggedness under severe
operating conditions.
Features:
D 70W Minimum with Greater than 13.5dB Gain
D Withstands Severe Mismatch under Operating Conditions
D Emitter Ballasted
D Low Inductance Stripline Package
Absolute Maximum Ratings:
Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Maximum Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Total Device Dissipation (+25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220W
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8°C/W
Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Electrical Characteristics:
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 50mA, IB = 0, Note 1
Collector–Emitter Breakdown Voltage V(BR)CES IC = 20mA, VBE = 0, Note 1
Emitter–Base Breakdown Voltage V(BR)EBO IE = 5mA, IC = 0
Collector Cut–Off Current
ICBO VCB = 15V, IE = 0
DC Current Gain
hFE VCE = 5V, IC = 5A
18 –
36 –
4–
––
10 –
–V
–V
–V
3 mA
–
Gain Bandwidth
Output Capacitance
Amplifier Power Out
Amplifier Power Gain
ft VCE = 13.5V, IC = 100mA
Cob VCB = 12.5V, IC = 0,
–FO = 1.0MHz
PO 30MHz/12.5V
Pg
200 – – MHz
– 300 – pF
70 –
13.5 14.2
–
–
W
dB
Note 1. Pulsed through 25mH Inductor
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.250
(6.35)
.225 (5.72)
.725 (18.42)
EC
.127 (3.17) Dia
(2 Holes)
BE
1.061 (26.95)
.480 (12.1) Dia
.065 (1.68)
.975 (24.77)
Ceramic Cap
.260
(6.6)
.095 (2.42)
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