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NTE318 PDF даташит

Спецификация NTE318 изготовлена ​​​​«NTE» и имеет функцию, называемую «Silicon NPN Transistor RF Power Output».

Детали детали

Номер произв NTE318
Описание Silicon NPN Transistor RF Power Output
Производители NTE
логотип NTE логотип 

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NTE318 Даташит, Описание, Даташиты
NTE318
Silicon NPN Transistor
RF Power Output
Description:
The NTE318 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF communica-
tions. This device utilizes improved metallization systems to achieve extreme ruggedness under se-
vere operating conditions.
Features:
D Designed for HF military and commercial equipment 40W minimum with greater than 10.0dB gain
D Withstands severe mismatch under operating conditions
D Low inductance Stripline Package
Absolute Maximum Ratings:
Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Maximum Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Total Device Dissipation (+25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80W
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2°C/W
Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Electrical Characteristics:
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 200mA, IB = 0, Note 1
18 – – V
Collector–Emitter Breakdown Voltage V(BR)CES IC = 200mA, VBE = 0, Note 1 36 – – V
Emitter–Base Breakdown Voltage V(BR)EBO IE = 2.5mA, IC = 0
4––V
Collector Cut–Off Current
ICBO VCB = 15V, IE = 0
– – 1 mA
DC Current Gain
hFE VCE = 5V, IC = 250mA
10 – –
Gain Bandwidth
ft VCE = 13.5V, IC = 100mA
200 – – MHz
Output Capacitance
Cob VCB = 12.5V, IC = 0,
–FO = 1.0MHz
– – 200 pF
Amplifier Power Out
PO 28MHz/12.5V
47 – – W
Amplifier Power Gain
Pg
10 – – dB
Note 1. Pulsed through 25mH Inductor









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NTE318 Даташит, Описание, Даташиты
.250
(6.35)
.225 (5.72)
.725 (18.42)
EC
.127 (3.17) Dia
(2 Holes)
BE
1.061 (26.95)
.480 (12.1) Dia
.065 (1.68)
.975 (24.77)
Ceramic Cap
.260
(6.6)
.095 (2.42)










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