NTE326 Datasheet PDF - NTE
| Part Number | NTE326 | |
| Description | Silicon P-Channel JFET Transistor General Purpose AF Amplifier | |
| Manufacturers | NTE | |
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NTE326
Silicon P–Channel JFET Transistor
General Purpose AF Amplifier
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Reverse Gate–Source Voltage, VGSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Forward Gate Current, IG(f) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 310mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.82mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +135°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max
Unit
OFF Characteristics
Gate–Source Breakdown Voltage
Gate Reverse Current
Gate–Source Cutoff Voltage
Gate–Source Voltage
ON Characteristics
V(BR)GSS IG = 10µA, VDS = 0
40 – –
IGSS VGS = 20V, VDS = 0
––5
VGS = 20V, VDS = 0, TA = +100°C – – 1
VGS(off) ID = 1µA, VDS = 15V
1.0 – 7.5
VGS ID = 0.2mA, VDS = 15V
0.8 – 4.5
V
nA
µA
V
V
Zero–Gate–Voltage Drain Current
Small–Signal Characteristics
IDSS VDS = 15V, VGS = 0, f = 1kHz
2–9
mA
Forward Transfer Admittance
Output Admittance
Input Capacitance
Reverse Transfer Capacitance
Functional Characteristics
|yfs| VDS = 15V, VGS = 0, f = 1kHz
|yos| VDS = 15V, VGS = 0, f = 1kHz
Ciss VDS = 15V, VGS = 0, f = 1MHz
Crss VDS = 15V, VGS = 0, f = 1MHz
1500 – 5000 µmho
– – 75 µmho
–57
pF
–12
pF
Noise Figure
NF VDS = 15V, VGS = 0, RG = 1MΩ,
f = 100Hz, BW = 1Hz
– 1.0 2.5
dB
Equivalent Short–Circuit Input Noise
Voltage
en VDS = 15V, VGS = 0, f = 100Hz,
BW = 1Hz
– 60 115 nV/pHz
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for NTE326 electronic component. |
| Information | Total 2 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ NTE326.PDF Datasheet ] | |
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