DataSheet26.com

NTE3310 PDF даташит

Спецификация NTE3310 изготовлена ​​​​«NTE» и имеет функцию, называемую «Insulated Gate Bipolar Transistor N-Channel Enhancement Mode / High Speed Switch».

Детали детали

Номер произв NTE3310
Описание Insulated Gate Bipolar Transistor N-Channel Enhancement Mode / High Speed Switch
Производители NTE
логотип NTE логотип 

2 Pages
scroll

No Preview Available !

NTE3310 Даташит, Описание, Даташиты
NTE3310
Insulated Gate Bipolar Transistor
N–Channel Enhancement Mode,
High Speed Switch
Features:
D High Input Impedance
D High Speed
D Low Saturation Voltage
D Enhancement Mode
Applications:
D High Power Switching
D Motor Control
Absolute Maximum Raings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Gate–Emitter Voltage, VGES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
Collector Current, IC
DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Pulse (1ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Gate Leakage Current
Collector Cutoff Current
IGES
ICES
VGE = ±20V, VCE = 0
VCE = 600V, VGE = 0
Collector–Emitter Breakdown Voltage V(BR)CES IC = 2mA, VGE = 0
Gate–Emitter Cutoff Voltage
VGE(off) IC = 15mA, VCE = 5V
Collector–Emitter Saturation Voltage
Input Capacitance
Rise Time
Turn–On Time
VCE(sat)
Cies
tr
ton
IC = 15A, VGE = 15V
VCE = 10V, VGE = 0, f = 1MHz
VCC = 300V
Fall Time
tf
Turn–Off Time
toff
Min Typ Max Unit
– – ±500 nA
– – 1.0 mA
600 – – V
3.0 – 6.0 V
– 3.0 4.0 V
– 1100 – pF
– 0.3 0.6 µs
– 0.4 0.8 µs
– 0.15 0.35 µs
– 0.5 1.0 µs









No Preview Available !

NTE3310 Даташит, Описание, Даташиты
C
G
E
.190 (4.82)
.615 (15.62)
.787
(20.0)
.591
(15.02)
.126 (3.22) Dia
.787
(20.0)
G C/
Case
E
.215 (5.47)










Скачать PDF:

[ NTE3310.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NTE331Silicon Complementary Transistors Audio Power Amp / SwitchNTE
NTE
NTE3310Insulated Gate Bipolar Transistor N-Channel Enhancement Mode / High Speed SwitchNTE
NTE
NTE3311Insulated Gate Bipolar Transistor N-Channel Enhancement Mode / High Speed SwitchNTE
NTE
NTE3312Insulated Gate Bipolar Transistor N-Channel Enhancement Mode / High Speed SwitchNTE
NTE

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск