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Número de pieza | NTE337 | |
Descripción | Silicon NPN Transistor RF Power Amp / Driver | |
Fabricantes | NTE | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de NTE337 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! NTE337
Silicon NPN Transistor
RF Power Amp, Driver
Description:
The NTE337 is a silicon NPN transistor in a T72H type package designed primarily for use in large–
signal amplifier driver and pre–driver stages. This device is intended for use in industrial communica-
tions equipment operating at frequencies to 80MHz.
Features:
D Specified 12.5V, 50MHz Characteristics:
Output Power = 8W
Minimum Gain = 10dB
Efficiency = 50%
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 200mA, IB = 0, Note 1
18 –
–V
V(BR)CES IC = 50mA, VBE = 0, Note 1
36 –
–V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 5mA, IC = 0
4 – –V
Collector Cutoff Current
ICES VCE = 15V, VBE = 0, TC = +125°C
–
– 10 mA
ICBO VCB = 15V, IE = 0
– – 1 mA
ON Characteristics
DC Current Gain
hFE IC = 500mA, VCE = 5V
5––
Note 1. Pulsed through a 25mH inductor.
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ
Dynamic Characteristics
Output Capacitance
Cob VCB = 15V, IE = 0, f = 0.1 to 1MHz
–
–
Max Unit
90 pF
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet NTE337.PDF ] |
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