DataSheet26.com

NTE345 PDF даташит

Спецификация NTE345 изготовлена ​​​​«NTE» и имеет функцию, называемую «Silicon NPN Transistor RF Power Amp / Driver».

Детали детали

Номер произв NTE345
Описание Silicon NPN Transistor RF Power Amp / Driver
Производители NTE
логотип NTE логотип 

2 Pages
scroll

No Preview Available !

NTE345 Даташит, Описание, Даташиты
NTE345
Silicon NPN Transistor
RF Power Amp, Driver
Description:
The NTE345 is a silicon NPN transistor in a T72H type package designed primarily for use in 13.6V
large–signal amplifier applications in industrial and commercial FM equipment operating to 175MHz.
This device is ideally suited for marine radio applications.
Features:
D Specified 13.6V, 160MHz Characteristics:
Output Power = 30W
Minimum Gain = 9dB
Efficiency = 60%
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.37W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
ON Characteristics
V(BR)CEO IC = 100mA, IB = 0
V(BR)CBO IC = 15mA, IE = 0
V(BR)EBO IE = 5mA, IC = 0
18 –
36 –
4–
–V
–V
–V
DC Current Gain
Dynamic Characteristics
hFE IC = 1A, VCE = 5V
5––
Output Capacitance
Cob VCB = 15V, IE = 0, f = 0.1 to 1MHz – 110 130 pF
Functional Tests (VCC = 13.6V unless otherwise specified)
Common–Emitter Amplifier
Power Gain
GPE Pout = 30W, f = 160MHz
9 10 – dB
Collector Efficiency
η Pout = 30W, f = 160MHz
60 –
–%









No Preview Available !

NTE345 Даташит, Описание, Даташиты
1.040 (26.4) Max
.520 (13.2)
C
.230
(5.84)
E
E
.100 (2.54)
B
.385 (9.8)
Dia
.005 (0.15)
832NC3A
Wrench Flat
.168 (4.27)
.750
(19.05)










Скачать PDF:

[ NTE345.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NTE340Silicon NPN Transistor RF Power Output / High FrequencyNTE
NTE
NTE341Silicon NPN Transistor RF Power OutputNTE
NTE
NTE342Silicon NPN Transistor RF Power Output (PO = 6W / 175MHz)NTE
NTE
NTE343Silicon NPN Transistor RF Power Output (PO = 14W / 175MHz)NTE
NTE

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск