NTE350 PDF даташит
Спецификация NTE350 изготовлена «NTE» и имеет функцию, называемую «Silicon NPN Transistor RF Power Amp / Driver». |
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Детали детали
Номер произв | NTE350 |
Описание | Silicon NPN Transistor RF Power Amp / Driver |
Производители | NTE |
логотип |
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NTE350
Silicon NPN Transistor
RF Power Amp, Driver
Description:
The NTE350 is a silicon NPN transistor in a T72H type package designed primarily for use in 12.5V
VHF large–signal power amplifier applications required in commercial and industrial equipment to
300MHz.
Features:
D Specified 12.5V, 175MHz Characteristics:
Output Power = 15W
Minimum Gain = 6.3dB
Efficiency = 60%
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V
Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A
Total Device Dissipation (Note 1, TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 177mW/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Note 1. This device is designed for RF operation. The total device dissipation rating applies only
when the device is operated as an RF amplifier.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
ON Characteristics
V(BR)CEO IC = 20mA, IB = 0
V(BR)CES IC = 10mA, VBE = 0
V(BR)EBO IE = 1mA, IC = 0
ICBO VCB = 15V, IE = 0
ICES VCE = 15V, VBE = 0, TC = +55°C
DC Current Gain
hFE IC = 500mA, VCE = 5V
Min Typ Max Unit
18 –
–V
36 –
–V
4 – –V
– – 0.5 mA
– – 8 mA
5––
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Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Dynamic Characteristics
Output Capacitance
Cob VCB = 15V, IE = 0, f = 0.1MHz
Functional Tests (VCC = 12.5V unless otherwise specified)
– 70 85 pF
Common–Emitter Amplifier
Power Gain
GPE Pout = 15W, f = 175MHz
6.3 –
– dB
Collector Efficiency
η Pout = 15W, f = 175MHz
60 –
–%
1.040 (26.4) Max
.520 (13.2)
C
.230
(5.84)
E
E
.100 (2.54)
B
.385 (9.8)
Dia
.005 (0.15)
8–32–NC–3A
Wrench Flat
.168 (4.27)
.750
(19.05)
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Номер в каталоге | Описание | Производители |
NTE350 | Silicon NPN Transistor RF Power Amp / Driver | NTE |
NTE351 | Silicon NPN Transistor RF Power Amp / Driver | NTE |
NTE352 | Silicon Complementary Transistors Digital w/2 Built-In Bias 47k Resistors (Surface Mount) | NTE |
NTE353 | Silicon NPN Transistor RF Power Output PO = 4W @ 175MHz | NTE |
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