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PDF NTE351 Data sheet ( Hoja de datos )
| Número de pieza | NTE351 | |
| Descripción | Silicon NPN Transistor RF Power Amp / Driver | |
| Fabricantes | NTE | |
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NTE351
Silicon NPN Transistor
RF Power Amp, Driver
Description:
The NTE351 is a silicon NPN transistor in a T72H type package designed primarily for use in 12.5V
VHF large–signal power amplifier applications required in commercial and industrial equipment to
300MHz.
Features:
D Specified 12.5V, 175MHz Characteristics:
Output Power = 25W
Minimum Gain = 6.2dB
Efficiency = 65%
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V
Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Total Device Dissipation (Note 1, TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 370mW/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Note 1. This device is designed for RF operation. The total device dissipation rating applies only
when the device is operated as an RF amplifier.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 100mA, IB = 0
V(BR)CES IC = 15mA, VBE = 0
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 5mA, IC = 0
Collector Cutoff Current
ON Characteristics
ICBO
ICES
VCB = 15V, IE = 0
VCE = 15V, VBE = 0, TC = +55°C
DC Current Gain
hFE IC = 1A, VCE = 5V
Min Typ Max Unit
18 –
–V
36 –
–V
4 – –V
– – 1.0 mA
– – 10 mA
5––
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet NTE351.PDF ] | |
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