|
|
PDF NTE352 Data sheet ( Hoja de datos )
| Número de pieza | NTE352 | |
| Descripción | Silicon Complementary Transistors Digital w/2 Built-In Bias 47k Resistors (Surface Mount) | |
| Fabricantes | NTE | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NTE352 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
|
No Preview Available !
NTE352
Silicon NPN Transistor
RF Power Amp, Driver
Description:
The NTE352 is a silicon NPN transistor in a W65 type package designed primarily for use in 12.5V
VHF large–signal power amplifier applications required in commercial and industrial FM equipment
to 175MHz.
Features:
D Specified 12.5V, 175MHz Characteristics:
Output Power = 75W
Minimum Gain = 7.0dB
Efficiency = 55%
D Characterized with Series Equivalent large–Signal Impedance Parameters
D Internal Matching Network Optimized for Minimum Gain Frequency Slope Response over the
Range 136 to 175MHz
D Load Mismatch capability at Rated POUT and Supply Voltage
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current (Peak), IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Total Device Dissipation (Note 1, TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43mW/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resuistance, Junction–to–Case (Note 2), RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.7°C/W
Note 1. This device is designed for RF operation. The total device dissipation rating applies only
when the device is operated as an RF amplifier.
Note 2. Thermal Resistance is determined under specified RF operating conditions by infrared
measurement techniques.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
ON Characteristics
V(BR)CEO IC = 100mA, IB = 0
V(BR)CES IC = 50mA, VBE = 0
V(BR)EBO IE = 10mA, IC = 0
DC Current Gain
hFE IC = 5A, VCE = 5V
Min Typ Max Unit
18 –
36 –
4–
–V
–V
–V
10 75 150
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet NTE352.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NTE350 | Silicon NPN Transistor RF Power Amp / Driver | NTE |
| NTE351 | Silicon NPN Transistor RF Power Amp / Driver | NTE |
| NTE352 | Silicon Complementary Transistors Digital w/2 Built-In Bias 47k Resistors (Surface Mount) | NTE |
| NTE353 | Silicon NPN Transistor RF Power Output PO = 4W @ 175MHz | NTE |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |