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Número de pieza | NTE353 | |
Descripción | Silicon NPN Transistor RF Power Output PO = 4W @ 175MHz | |
Fabricantes | NTE | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de NTE353 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! NTE353
Silicon NPN Transistor
RF Power Output
PO = 4W @ 175MHz
Description:
The NTE353 is designed for 12.5 Volt VHF large–signal amplifier applications required in military and
industrial equipment operating to 250MHz.
Features:
D Balanced Emitter Construction with Isothermal Resistor Design to Provide the Designer with
the Optimum in Transistor Ruggedness.
D Low lead Inductance Stripline Packaging for Easier Design and Increased Broadband Capabilities
D Flange Package for Easy Mounting and Better Thermal Conductivity to Heat Sink.
D Exceptional Power Output Stability versus Temperature.
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current–Continuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Total Device Dissipation (TC = +25°C, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45.7mW/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Note 1. This device is designed for RF operation. The total device dissipation rating applies only
when the device is operated as an RF amplifier.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
V(BR)CEO
V(BR)CES
V(BR)EBO
ICBO
ICES
IC = 10mA, IB = 0
IC = 5mA, VBE = 0
IE = 1mA, IC = 0
VCB = 15V, IE = 0
VCE = 15V, VBE = 0, TC = +55°C
Min Typ Max Unit
18 – – V
36 – – V
4––V
– – 250 µA
– – 5 mA
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet NTE353.PDF ] |
Número de pieza | Descripción | Fabricantes |
NTE350 | Silicon NPN Transistor RF Power Amp / Driver | NTE |
NTE351 | Silicon NPN Transistor RF Power Amp / Driver | NTE |
NTE352 | Silicon Complementary Transistors Digital w/2 Built-In Bias 47k Resistors (Surface Mount) | NTE |
NTE353 | Silicon NPN Transistor RF Power Output PO = 4W @ 175MHz | NTE |
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