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PDF NTE354 Data sheet ( Hoja de datos )
| Número de pieza | NTE354 | |
| Descripción | Silicon NPN Transistor RF Power Output PO = 15W @ 175MHz | |
| Fabricantes | NTE | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de NTE354 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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NTE354
Silicon NPN Transistor
RF Power Output
PO = 15W @ 175MHz
Description:
The NTE354 is designed for 12.5 Volt VHF large–signal amplifier applications required in military and
industrial equipment operating to 250MHz.
Features:
D Balanced Emitter Construction with Isothermal Resistor Design to Provide the Designer with
the Optimum in Transistor Ruggedness.
D Low lead Inductance Stripline Packaging for Easier Design and Increased Broadband Capabilities
D Flange Package for Easy Mounting and Better Thermal Conductivity to Heat Sink.
D Exceptional Power Output Stability versus Temperature.
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current–Continuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A
Total Device Dissipation (TC = +25°C, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114mW/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Note 1. This device is designed for RF operation. The total device dissipation rating applies only
when the device is operated as an RF amplifier.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
V(BR)CEO
V(BR)CES
V(BR)EBO
ICBO
ICES
IC = 20mA, IB = 0
IC = 10mA, VBE = 0
IE = 2mA, IC = 0
VCB = 15V, IE = 0
VCE = 15V, VBE = 0, TC = +55°C
Min Typ Max Unit
18 – – V
36 – – V
4––V
– – 250 µA
– – 500 µA
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet NTE354.PDF ] | |
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