NTE361 PDF даташит
Спецификация NTE361 изготовлена «NTE» и имеет функцию, называемую «Silicon NPN Transistor RF Power Output PO = 2W @ 512MHz». |
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Детали детали
Номер произв | NTE361 |
Описание | Silicon NPN Transistor RF Power Output PO = 2W @ 512MHz |
Производители | NTE |
логотип |
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NTE361
Silicon NPN Transistor
RF Power Output
PO = 2W @ 512MHz
Description:
The NTE361 is a silicon NPN transistor designed for 12.5 Volt UHF large–signal amplifier applications
in industrial and commercial FM equipment operating to 512MHz.
Features:
D Specified 12.5 Volt, 470MHz Characteristics:
Output Power = 2.0 Watts
Minimum Gain = 8.0dB
Efficiency = 50%
D Characterized with Series Equivalent Large–Signal Impedance Parameters
D Grounded Emitter TO39 Package for High Gain and Excellent Heat Dissipation
D Replaces Medium–Power Stud Mounted Devices
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current–Continuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA
Total Device Dissipation @ TC = 25°C, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46mW/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
V(BR)CEO
V(BR)CES
V(BR)EBO
ICBO
IC = 50mA, IB = 0
IC = 50mA, VBE = 0
IE = 1mA, IC = 0
VCB = 15V, IE = 0
Min Typ Max Unit
16 – – V
36 – – V
4––V
– – 1.0 mA
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Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics
DC Current Gain
Dynamic Characteristics
hFE VCE = 5V, IC = 100mA
20 – 200
Output Capacitance
Cob VCB = 12.5V, IE = 0, f = 1MHz
– – 15 pF
Functional Test
Common–Emitter Amplifier Power Gain
Collector Efficiency
GPE POUT = 2W, VCC = 12.5V, f = 470MHz 8.0 –
η POUT = 2W, VCC = 12.5V, f = 470MHz 50 –
– dB
–%
.260 (6.6)
Max
.370 (9.39) Dia Max
.355 (9.03) Dia Max
.500 (12.7)
Min
Collector
45°
.018 (0.45) Dia
Base
Emitter/Case
.031 (.793)
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Номер в каталоге | Описание | Производители |
NTE36 | Silicon Complementary Transistors AF Power Amplifier / High Current Switch | NTE |
NTE361 | Silicon NPN Transistor RF Power Output PO = 2W @ 512MHz | NTE |
NTE362 | Silicon NPN Transistor RF Power | NTE Electronics |
NTE363 | Silicon NPN Transistor RF Power Amp / PO = 4W | NTE |
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