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NTE363 PDF даташит

Спецификация NTE363 изготовлена ​​​​«NTE» и имеет функцию, называемую «Silicon NPN Transistor RF Power Amp / PO = 4W».

Детали детали

Номер произв NTE363
Описание Silicon NPN Transistor RF Power Amp / PO = 4W
Производители NTE
логотип NTE логотип 

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NTE363 Даташит, Описание, Даташиты
NTE363
Silicon NPN Transistor
RF Power Amp, PO = 4W
Description:
The NTE363 is a 12.5V epitaxial silicon NPN planer transistor designed primarily for UHF commu-
nications.
Features:
D Designed for UHF Military and Commercial Equipment
D 4W (Min) with Greater than 8dB Gain
D Withstands Infinite VSWR Under Operating Conditions
D Low Inductance Stripline Package
D Emitter Stabilized
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Maximum Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA
Total Device Dissipation (TC = +25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.6°C/W
Electrical Characteristics:
Parameter
Collector–Emiter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Symbol
Test Conditions
V(BR)CEO IC = 100mA, IB = 0, Note 1
V(BR)CES IC = 100mA, IBE = 0, Note 1
V(BR)EBO IE = 2mA, IC = 0
ICBO VCB = 5V, IE = 0
hFE VCE = 5V, IC = 200mA
Note 1. Pulsed throught 25MH inductor.
Min Typ Max Unit
16 – – V
36 – – V
4––V
– – 1.0 mA
20 –









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NTE363 Даташит, Описание, Даташиты
Electrical Characteristics (Cont’d):
Parameter
Symbol
Test Conditions
RF Characteristics, Small–Signal
Output Capacitance
Input Capacitance
RF Characteristics, Large–Signal
Cob VCB = 12.5V, IC = 0
Cib VEB = 500mV, IC = 0
Amplifier Power Out
Amplifier Power Gain
PO 470MHz/12.5V
Pg
Input Impedance
Output Impedance
Zin
Zout
Min Typ Max Unit
– – 25 pF
60 pF
4––
8––
2.0 + J.96
6.0 J3.4
W
dB
B
.225 (5.72)
E
C
E
.530
(13.46)
.063 (1.62)
.005 (0.15)
832 NC3A
.282 (7.17)
Dia
.123 (3.12)
Seating
Plane
.630
(16.0)
Wrench Flat
.250 (6.35) Dia










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