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NTE385 PDF даташит

Спецификация NTE385 изготовлена ​​​​«NTE» и имеет функцию, называемую «Silicon NPN Transistor Audio Power Amp / Switch».

Детали детали

Номер произв NTE385
Описание Silicon NPN Transistor Audio Power Amp / Switch
Производители NTE
логотип NTE логотип 

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NTE385 Даташит, Описание, Даташиты
NTE385
Silicon NPN Transistor
Audio Power Amp, Switch
Description:
The NTE385 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed,
power switching in inductive circuits where fall time is critical. It is particularly suited for line operated
switch mode applications.
Features:
D Fast Turn–Off Times
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Collector–Emitter Voltage (VBE = –1.5V), VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 850V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Overload . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A
Base Current, IB
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/°C
Total Power Dissipation (TC = +100°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0°C/W
Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . . . . . . . . . . +275°C
Note 1. Pulse test: Pulse Width = 5ms, Duty Cycle 10%.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics (Note 2)
Collector–Emitter Sustaining Voltage VCEO(sus) IC = 200mA, IB = 0, L = 25mH
400 – – V
Collector Cutoff Current
ICEX VCEX = 850V, VBE(off) = 1.5V
– – 0.2 mA
VCEV = 850V, VBE(off) = 1.5V, TC = +125°C – – 2.0 mA
ICER VCE = 850V, RBE = 10
– – 0.5 mA
VCE = 850V, RBE = 10, TC = +100°C
– – 3.0 mA
Emitter Cutoff Current
IEBO VBE = 5V, IC = 0
– – 0.1 mA
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 50mA, –IC = 0
7––V
Note 2. Pulse test: Pulse Width = 300µs, Duty Cycle 2%, Vcl = 300V, VBE(off) = 5V, LC = 180µH.









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NTE385 Даташит, Описание, Даташиты
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 2)
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
Dynamic Characteristics
hFE
VCE(sat)
VBE(sat)
VCE = 5V, IC = 10A
IC = 10A, IB = 2A
IC = 10A, IB = 2A, TC = +100°C
IC = 8A, IB = 1.6A
IC = 8A, IB = 1.6A, TC = +100°C
IC = 10A, IB = 2A
IC = 10A, IB = 2A, TC = +100°C
8––
– – 1.5 V
– – 2.0 V
– – 1.5 V
– – 2.0 V
– – 1.6 V
– – 1.6 V
Output Capacitance
Cob VCB = 10V, IE = 0, ftest = 1kHz
Switching Characteristics (Resistive Load)
– – 350 pF
Delay Time
Rise Time
Storage Time
Fall Time
td VCC = 300V, IC = 10A, IB = 2A,
tr
tp = 30µs, Duty Cycle = 2%,
VBE(off) = 5V
ts
tf
Switching Characteristics (Inductive Load, Clamped)
Storage Time
Fall Time
Storage Time
Crossover Time
Fall Time
tsv IC = 10A, IB1 = 2A, TC = +25°C
tfi
tsv IC = 10A, IB1 = 2A, TC = +100°C
tc
tfi
0.1 0.2 µs
0.4 0.7 µs
1.3 2.0 µs
0.2 0.4 µs
1.3 µs
0.06 µs
1.5 2.5 µs
0.3 0.6 µs
0.17 0.35 µs
Note 2. Pulse test: Pulse Width = 300µs, Duty Cycle 2%, Vcl = 300V, VBE(off) = 5V, LC = 180µH.
.350 (8.89)
.135 (3.45) Max
.875 (22.2)
Dia Max
Seating
Plane
COLLECTOR
BASE
EMITTER
.312 (7.93) Min
.040 (1.02)
Emitter
.215 (5.45)
.430
(10.92)
1.187
(30.16)
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case










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