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NTE396 PDF даташит

Спецификация NTE396 изготовлена ​​​​«NTE» и имеет функцию, называемую «Silicon NPN Transistor Power Amplifier & High Speed Switch (Compl to NTE397)».

Детали детали

Номер произв NTE396
Описание Silicon NPN Transistor Power Amplifier & High Speed Switch (Compl to NTE397)
Производители NTE
логотип NTE логотип 

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NTE396 Даташит, Описание, Даташиты
NTE396
Silicon NPN Transistor
Power Amplifier & High Speed Switch
(Compl to NTE397)
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.7mW/°C
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28.6mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 1)
VCEO(sus)
ICEO
ICEX
ICBO
IEBO
IC = 50mA, IB = 0, Note 1
VCE = 300V, IB = 0
VCE = 450V, VBE = 1.5V
VCB = 360V, IE = 0
VEB = 6V, IC = 0
350 – – V
– – 20 µA
– – 500 µA
– – 20 µA
– – 20 µA
DC Current Gain
hFE IC = 2mA, VCE = 10V
30
IC = 20mA, VCE = 10V
40
Collector–Emitter Saturation Voltage VCE(sat) IC = 50mA, IB = 4mA
Base–Emitter Saturation Voltage VBE(sat) IC = 50mA, IB = 4mA
Note 1. Pulse Test; Pulse Width 300µs, Duty Cycle 2%.
CAUTION: The sustaining voltage must not be measured on a curve tracer.
––
– 160
– 0.5 V
– 1.3 V









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NTE396 Даташит, Описание, Даташиты
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Small–Signal Characteristics
Current GainBandwidth Product
Output Capacitance
Input Capacitance
SmallSignal Current Gain
Real Part of Input Impedance
fT
Cobo
Cibo
hfe
Re(hie)
IC = 10mA, VCE = 10V, f = 50MHz
VCB = 10V, IE = 0, f = 1MHz
VCB = 5V, IC = 0, f = 1MHz
IC = 5mA, VCE = 10V, f = 1MHz
VCE = 10V, IC = 5mA, f = 1MHz
15
25
– – MHz
10 pF
75 pF
––
300
.260
(6.6)
Max
.500
(12.7)
Min
.370 (9.39) Dia Max
.355 (9.03) Dia Max
Emitter
.018 (0.45)
Base
Collector/Case
45°
.031 (.793)










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