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NTE458 PDF даташит

Спецификация NTE458 изготовлена ​​​​«NTE» и имеет функцию, называемую «N-Channel Silicon JFET General Purpose / Low Noise / Audio Frequency Amplifier».

Детали детали

Номер произв NTE458
Описание N-Channel Silicon JFET General Purpose / Low Noise / Audio Frequency Amplifier
Производители NTE
логотип NTE логотип 

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NTE458 Даташит, Описание, Даташиты
NTE458
N–Channel Silicon JFET
General Purpose, Low Noise, Audio Frequency Amplifier
Features:
D Very Low Noise
D Low Gate Current
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Gate–Drain Voltage, VGDO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50V
Gate–Source Voltage, VGSO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50V
Drain–Source Voltage (VDS = –2V), VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Total Device Dissipation, PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max
Gate Reverse Current
Zero–Gate Voltage Drain Current
Gate–Source Voltage
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Noise Frequency
IGSS
IDSS
VGS(off)
gfs
Ciss
Crss
NF
VGS = –20V, VDS = 0
VDS = 10V, VGS = 0
VDS = 10V, ID = 10µA
VDS = 10V, ID = 0.5mA, f = 1kHz
VDS = 10V, VGS = 0, f = 1MHz
VDS = 10V, VGS = 0, f = 1MHz
VDS = 10V, VGS = 0, f = 1MHz
VDS = 10V, VGS = 0, RG = 1k,
f = 10Hz
0.5
–0.13
4.0
4.0
3.0
–0.5
5.2
12
13
2.6
5.0
–1
12
–1.5
10
VDS = 10V, VGS = 0, RG = 1k, – 1.0 3.0
f = 100Hz
VDS = 10V, VGS = 0, RG = 1k, – 0.6 1.5
f = 1kHz
Noise Voltage
NV ID = 0.5mA, RG = 1k,
f = 10Hz to 1kHz (at VG = –3dB)
15 20
Unit
nA
mA
V
mhos
mhos
pF
pF
dB
dB
dB
mV









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NTE458 Даташит, Описание, Даташиты
.210
(5.33)
Max
.135 (3.45) Min
Seating Plane
.500
(12.7)
Min
.021 (.445) Dia Max
.100 (2.54)
DG S
.050 (1.27)
.105 (2.67) Max
.205 (5.2) Max
.165
(4.2)
Max
.105 (2.67) Max










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