NTE459 PDF даташит
Спецификация NTE459 изготовлена «NTE» и имеет функцию, называемую «N-Channel Silicon JFET Transistor AF Amplifier/Chopper/Switch». |
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Детали детали
Номер произв | NTE459 |
Описание | N-Channel Silicon JFET Transistor AF Amplifier/Chopper/Switch |
Производители | NTE |
логотип |
2 Pages
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NTE459
N–Channel Silicon JFET Transistor
AF Amplifier/Chopper/Switch
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50V
Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mW/°C
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +200°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max
OFF Characteristics
Gate–Source Breakdown Voltage
Gate Reverse Current
Gate–Source Cutoff Voltage
Gate–Source Voltage
ON Characteristics
V(BR)GSS IG = –1µA, VDS = 0
IGSS VGS = –30V, VDS = 0
VGS = –30V, VDS = 0, TA = +150°C
VGS(off) ID = 0.5nA, VDS = 15V
VGS ID = 200µA, VDS = 15V
–50
–
–
–
–1
––
– –0.1
– –100
– –6
– –4
Zero–Gate–Voltage Drain Current
Small–Signal Characteristics
IDSS VDS = 15V, VGS = 0, Note 1
2 – 10
Forward Transfer Admittance
|yfs| VDS = 15V, VGS = 0, f = 1kHz,
Note 1
3000 – 6500
Output Admittance
VDS = 15V, VGS = 0, f = 100MHz 3000 –
|yos| VDS = 15V, VGS = 0, f = 1kHz,
Note 1
––
–
20
Input Capacitance
Reverse Transfer Capacitance
Ciss VDS = 15V, VGS = 0, f = 1MHz
Crss VDS = 15V, VGS = 0, f = 1MHz
––6
––3
Note 1. Pulse Test: Pulse Width ≤ 100ms, Duty Cycle ≤ 10%.
Unit
V
nA
nA
V
V
mA
µmho
µmho
µmho
pF
pF
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Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Functional Characteristics
Noise Figure
NF VDS = 15V, VGS = 0, RG = 1MΩ, – – 5
f = 10Hz, BW = 5Hz
dB
Equivalent Short–Circuit Input Noise
Voltage
en VDS = 15V, VGS = 0, f = 10Hz,
BW = 5Hz
– – 200 nV/Hz1/2
.190
(4.82)
.500
(12.7)
Min
.220 (5.58) Dia
.185 (4.7) Dia
.030 (.762)
.018 (0.45) Dia
Source
Drain
Gate
45°
.040 (1.02)
Case
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