|
|
PDF NTE466 Data sheet ( Hoja de datos )
| Número de pieza | NTE466 | |
| Descripción | Silicon N-Channel JFET Transistor Chopper / High Speed Switch | |
| Fabricantes | NTE | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NTE466 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
|
No Preview Available !
NTE466
Silicon N–Channel JFET Transistor
Chopper, High Speed Switch
Absolute Maximum Ratings:
Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Reverse Gate–Source Voltage, VGSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40V
Forward Gate Current, IG(f) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4mW/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Gate–Source Breakdown Voltage
Gate Reverse Current
Gate–Source Cutoff Voltage
Drain Cutoff Current
ON Characteristics
V(BR)GSS IG = 1A, VDS = 0
–40 – – V
IGSS VGS = –20V, VDS = 0
– – 0.25 nA
VGS = –20V, VDS = 0, TA = +150°C
–
– 0.5 µA
VGS(off) VDS = 15V, ID = 0.5nA
–4 – –10 V
ID(off) VDS = 15V, VGS = –10V
– – 0.25 nA
VDS = 15V, VGS = –10V, TA = +150°C –
– 0.5 µA
Zero–Gate–Voltage Drain Current
Drain–Source ON–Voltage
Small–Signal Characteristics
Drain–Source “ON” Resistance
Input Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
IDSS VDS = 15V, VGS = 0, Note 1
VDS(on) ID = 20mA, VGS = 0
rDS(on)
Ciss
Crss
VGS = 0, ID = 0, f = 1kHz
VDS = 0, VGS = –10V, f = 1MHz
VDS = 0, VGS = –10V, f = 1MHz
50 –
– mA
– – 0.75 V
– – 25 Ω
– – 18 pF
– – 0.8 pF
Turn–On Delay Time
Rise Time
Turn–Off Time
td(on)
tr
toff
VDD = 10V, ID(on) = 20mA,
VGS(on) = 0, VGS(off) = –10V
– – 6 ns
– – 3 ns
– – 25 ns
Note 1. Pulse Test: Pulse Width = 100ms, Duty Cycle ≤ 10%.
Note 2. The ID(on) values are nominal; exact values vary slightly with transistor parameters.
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet NTE466.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NTE46 | Silicon NPN Transistor Darlington / General Purpose Amplifier / Preamp / Driver | NTE |
| NTE460 | Silicon P-Channel JFET Transistor AF Amp | NTE |
| NTE464 | Silicon Complementary MOSFET Transistors Enhancement Mode for Switching Applications | NTE |
| NTE465 | Silicon Complementary MOSFET Transistors | NTE |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |