NTE468 PDF даташит
Спецификация NTE468 изготовлена «NTE» и имеет функцию, называемую «Silicon N-Channel JFET Transistor Chopper / High Speed Switch». |
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Детали детали
Номер произв | NTE468 |
Описание | Silicon N-Channel JFET Transistor Chopper / High Speed Switch |
Производители | NTE |
логотип |
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NTE468
Silicon N–Channel JFET Transistor
Chopper, High Speed Switch
Applications:
D Analog Switches
D Choppers
D Commutators
Absolute Maximum Ratings:
Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.68mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Lead Temperature (During Soldering), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Gate–Source Breakdown Voltage
Gate Reverse Current
Gate–Source Cutoff Voltage
Drain Cutoff Current
ON Characteristics
V(BR)GS
S
IGSS
VGS(off)
ID(off)
IG = 1µA, VDS = 0
VGS = –15V, VDS = 0
VDS = 5V, ID = 1µA
VDS = 5V, VGS = –10V
Zero–Gate Voltage Drain Current
IDSS VDS = 15V, VGS = 0, Note 1
Static Drain–Source ON Resistance rDS(on) VDS = 0.1V
Drain–Gate ON Capacitance
Source–Gate ON Capacitance
Drain–Gate OFF Capacitance
Source–Gate OFF Capacitance
Cdg(on)
Csg(on)
Cdg(off)
Csg(off)
VDS = VGS = 0, f = 1MHz
VDS = VGS = 0, f = 1MHz
VGS = –10V, f = 1MHz
VGS = –10V, f = 1MHz
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 3%.
Min Typ Max Unit
35 – – V
– – –1.0 nA
–3 – –10 V
– – 1.0 nA
20 –
– mA
– – 30 Ω
– – 28 pF
– – 28 pF
– – 5 pF
– – 5 pF
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.210
(5.33)
Max
.135 (3.45) Min
Seating Plane
.500
(12.7)
Min
.021 (.445) Dia Max
.100 (2.54)
DSG
.050 (1.27)
.105 (2.67) Max
.205 (5.2) Max
.165
(4.2)
Max
.105 (2.67) Max
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