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PDF NTE480 Data sheet ( Hoja de datos )
| Número de pieza | NTE480 | |
| Descripción | Silicon NPN Transistor RF Power Output for Broadband Amp / PO = 40W @ 512MHz | |
| Fabricantes | NTE | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de NTE480 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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NTE480
Silicon NPN Transistor
RF Power Output for Broadband Amp,
PO = 40W @ 512MHz
Description:
The NTE480 is a 12.5 Volt epitaxial silicon NPN common emitter transistor designed for broadband
applications in the 450 to 512MHz land mobile radio band. This device utilizes diffused emitter resis-
tors to withstand infinite VSWR under operating conditions.
Features:
D Designed for UHF Commercial Equipment
D 38W with Greater than 5.8dB Gain
D Withstands 20:1 VSWR Min., All Phase Angles
D Tuned Q Technology
D Diffused Emitter Resistors
Absolute Maximum Ratings: (TC = +25°C unless othrwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Maximum Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Total Device Dissipation (At +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5°C/W
Electrical Characteristic: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Static
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 50mA, IB = 0, Note 1
V(BR)CES IC = 15mA, VBE = 0, Note 1
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 5mA, iC = 0
Collector Cutoff Current
DC Current Gain
ICES
hFE
VCE = 12.5V, VBE = 0
VCE = 5V, IC = 1A
Min Typ Max Unit
16 –
36 –
4–
––
20 –
–V
–V
–V
5 mA
–
Note 1. Pulsed through 25mH indicator.
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet NTE480.PDF ] | |
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