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PDF NTE483 Data sheet ( Hoja de datos )
| Número de pieza | NTE483 | |
| Descripción | Silicon NPN Transistor RF Power Output for Mobile Use / PO = 18W @ 866MHz | |
| Fabricantes | NTE | |
| Logotipo |  |
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NTE483
Silicon NPN Transistor
RF Power Output for Mobile Use,
PO = 18W @ 866MHz
Description:
The NTE483 is a 12.5 Volt epitaxial silicon NPN planer transistor designed for primarily for 800MHz
mobile communications. This device utilizes matched input technology (Tuned Q) to increase band-
width and power gain over the complete range of 806–866MHz.
Features:
D Designed for 806–866MHz Mobile Equipment
D 18W Min., with Greater than 6dB Gain at 836MHz
D Withstands 10:1 VSWR at Rated Operating Conditions
D Matched Input Technology
D Common Base
Absolute Maximum Ratings: (TC = +25°C unless othrwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Maximum Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A
Total Device Dissipation (At +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.8°C/W
Electrical Characteristic: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Static
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 50mA, IB = 0, Note 1
V(BR)CES IC = 50mA, VBE = 0, Note 1
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 10mA, iC = 0
Collector Cutoff Current
DC Current Gain
ICES
hFE
VCE = 15V, VBE = 0
VCE = 6V, IC = 1A
Min Typ Max Unit
16 – – V
36 – – V
4 ––V
– – 10 mA
20 –
–
Note 1. Pulsed through 25mH indicator.
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet NTE483.PDF ] | |
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