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PDF NTE484 Data sheet ( Hoja de datos )
| Número de pieza | NTE484 | |
| Descripción | Silicon NPN Transistor RF Power Output for Mobile Use / PO = 25W @ 947MHz | |
| Fabricantes | NTE | |
| Logotipo |  |
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NTE484
Silicon NPN Transistor
RF Power Output for Mobile Use,
PO = 25W @ 947MHz
Description:
The NTE484 is a 12.5 Volt epitaxial silicon NPN planer transistor designed for primarily for 800MHz
mobile communications. This device is internally input matched in the common base configuration
for extremely broadband performance and optimum gain characteristics.
Features:
D Designed for 800 MHz Mobile Communications Equipment
D 25W Min., with Greater than 5dB Gain at 836MHz
D Withstands Infinite VSWR at Rated Operating Conditions
D Internal Input matched “Tuned Q”
D Common Base Configuration
Absolute Maximum Ratings: (TC = +25°C unless othrwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Maximum Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Total Device Dissipation (At +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.3°C/W
Electrical Characteristic: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Static
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 50mA, IB = 0, Note 1
V(BR)CES IC = 50mA, VBE = 0, Note 1
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 10mA, IC = 0
Collector Cutoff Current
DC Current Gain
ICES
hFE
VCE = 15V, VBE = 0
VCE = 6V, IC = 1A
Min Typ Max Unit
16 – – V
36 – – V
4 ––V
– – 10 mA
20 –
–
Note 1. Pulsed through 25mH indicator.
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet NTE484.PDF ] | |
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