NTE486 PDF даташит
Спецификация NTE486 изготовлена «NTE» и имеет функцию, называемую «Silicon NPN Transistor RF High Frequency Amplifier». |
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Детали детали
Номер произв | NTE486 |
Описание | Silicon NPN Transistor RF High Frequency Amplifier |
Производители | NTE |
логотип |
2 Pages
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NTE486
Silicon NPN Transistor
RF High Frequency Amplifier
Description:
The NTE486 is a silicon NPN high frequency RF transistor in a TO39 type package designed for use
in 12.5V UHF large–signal applications required in industrial equipment.
Features:
D Specified 12.5V, 470MHz Characteristics:
Output Power = 0.75W
Minimum Gain = 8dB
Effeciency = 50%
D S Parameter Data from 100MHz to 1GHz
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14.3mW/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
ON Characteristics
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEO
IC = 5mA, IB = 0
IC = 100µA, IE = 0
IE = 100µA, IC = 0
VCE = 15V, IB = 0
DC Current Gain
hFE VCE = 10V, IC = 50mA
Collector–Emitter Saturation Voltage
VCE(sat) IC = 50mA, IB = 5mA
Min Typ Max Unit
20 – – V
35 – – V
4 – –V
– – 10 µA
20 60 150
– – 0.5 V
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Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Dynamic Characteristics
Current Gain–Bandwidth Product
fT VCE = 10V, IC = 100mA, f = 200MHz 1800 2000 – MHz
Output Capacitance
Functional Tests
Cob VCB = 12.5V, IE = 0, f = 1MHz
– 3.5 4.0 pF
Common–Emitter Amplifier Power Gain
Collector Efficiency
GPE VCC = 12.5V, PO = 0.75W,
h f = 470MHz
8.0 8.5
50 70
– dB
–%
Series Equivalent Input Impedance
Series Equivalent Output Impedance
Zin
Zout
– 14+j4.0 –
– 28–j38 –
Ω
Ω
.260 (6.6)
Max
.370 (9.39) Dia Max
.355 (9.03) Dia Max
.500 (12.7)
Min
Emitter
45°
.018 (0.45) Dia
Base
Collector/Case
.031 (.793)
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