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NTE49 PDF даташит

Спецификация NTE49 изготовлена ​​​​«NTE» и имеет функцию, называемую «Silicon Complementary Transistors General Purpose / High Voltage Amp / Driver».

Детали детали

Номер произв NTE49
Описание Silicon Complementary Transistors General Purpose / High Voltage Amp / Driver
Производители NTE
логотип NTE логотип 

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NTE49 Даташит, Описание, Даташиты
NTE49 (NPN) & NTE50 (PNP)
Silicon Complementary Transistors
General Purpose, High Voltage Amp, Driver
Description:
The NTE49 (NPN) and NTE50 (PNP) are silicon complementary transistors in a TO202 type case
designed for general purpose, high voltage amplifier and driver applications.
Features:
D High Collector Breakdown Voltage: V(BR)CEO = 100V Min @ IC = 1mA
D High Power Dissipation: PD = 10W @ TC = +25°C
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8mW/°C
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W
Note 1. NTE49 is a discontinued device and no longer available.









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NTE49 Даташит, Описание, Даташиты
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
CollectorEmitter Breakdown Voltage
EmitterBase Breakdown Voltage
Collector Cutoff Current
ON Characteristics (Note 2)
V(BR)CEO IC = 1mA, IB = 0
V(BR)EBO IE = 100µA, IC = 0
ICBO VCB = 40V, IE = 0
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter ON Voltage
Small–Signal Characteristics
hFE
VCE(sat)
VBE(on)
IC = 50mA, VCE = 1V
IC = 250mA, VCE = 1V
IC = 500mA, VCE = 1V
IC = 250mA, IB = 10mA
IC = 250mA, IB = 25mA
IC = 250mA, VCE = 5V
Current GainBandwidth Product
fT IC = 250mA, VCE = 5V,
f = 100MHz, Note 1
Output Capacitance
Cob VCB = 10V, IE = 0, f = 100kHz
Min Typ Max Unit
100 – – V
4––V
– – 100 nA
80 125
60 100
55
0.18 0.4
0.1
0.74 1.2
V
V
V
50 150 MHz
6 12 pF
Note 2. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
.380 (9.56)
C
.500
(12.7)
1.200
(30.48)
Ref
.300
(7.62)
.180 (4.57)
.132 (3.35) Dia
.325
(9.52)
.070 (1.78) x 45°
Chamf
.050 (1.27)
.400
(10.16)
Min
E BC
.100 (2.54)
.100 (2.54)










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