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NTE52 PDF даташит

Спецификация NTE52 изготовлена ​​​​«NTE» и имеет функцию, называемую «Silicon NPN Transistor High Voltage / High Speed Switch».

Детали детали

Номер произв NTE52
Описание Silicon NPN Transistor High Voltage / High Speed Switch
Производители NTE
логотип NTE логотип 

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NTE52 Даташит, Описание, Даташиты
NTE52
Silicon NPN Transistor
High Voltage, High Speed Switch
Description:
The NTE52 is a silicon NPN transistor in a TO3 type package designed for high voltage, high–speed
power switching in inductive circuits where fall time is critical. This device is particularly suited for
line–operated switch–mode appliations.
Applications:
D Switching Regulators
D Motor Controls
D Inverters
D Solenoid and Relay Drivers
Features:
D Fast Turn–Off Times:
100ns Inductive Fall Time @ +25°C (Typ)
150ns Inductive Crossover Time @ +25°C (Typ)
400ns Inductive Storage Time @ +25°C (Typ)
D Operating Temperature Range: –65° to +200°C
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V
Collector–Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Base Current, IB
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.714W/°C
Total Device Dissipation (TC = +100°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71.5W
Operating Junction Temperatur Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperatur Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4°C/W
Maximum Lead temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . . +275°C
Note 1. Pulse test: Pulse Width = 5ms, Duty Cycle 10%.









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NTE52 Даташит, Описание, Даташиты
Electrical Charactetristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics (Note 2)
CollectorEmitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 2)
VCEO(sus)
ICEV
ICER
IEBO
IC = 100mA, IB = 0
VCEV = 750V, VBE(off) = 1.5V
VCEV = 750V, VBE(off) = 1.5V,
TC = +100°C
VCEV = 750V, RBE = 50, TC = +100°C
VEB = 6V, IC = 0
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
Dynamic Characteristics
hFE
VCE(sat)
VBE(sat)
VCE = 5V, IC = 3A
IC = 3A, IB = 0.6A
IC = 3A, IB = 0.6A, TC = +100°C
IC = 5A, IB = 1A
IC = 3A, IB = 0.6A
IC = 3A, IB = 0.6A, TC = +100°C
Output Capacitance
Cob VCB = 10V, IE = 0, f = 1kHz
Switching Characteristics (Resistive Load)
Delay Time
Rise Time
Storage Time
td VCC = 250V, IC = 3A, IB1 = 0.4A,
tr
VBE(off) = 5V, tp = 300µs,
Duty Cycle 2%
ts
Fall Time
tf
Switching Characteristics (Inductive Load, Clamped)
Storage Time
Crossover Time
Fall Time
Storage Time
Crossover Time
Fall Time
tsv IC = 3A peak, Vclamp = 250V, IB1 = 0.4A,
tc VBE(off) = 5V
tfi
tsv IC = 3A peak, Vclamp = 250V, IB1 = 0.4A,
tc VBE(off) = 5V, TJ = +100°C
tfi
Note 2. Pulse test: Pulse Width = 300µs, Duty Cycle 2%.
Min Typ Max Unit
450
––
––
––
––
V
0.5 mA
2.5 mA
3.0 mA
1.0 mA
8
– – 1.0 V
– – 2.0 V
– – 3.0 V
– – 1.5 V
– – 1.5 V
– – 250 pF
0.03 0.05 µs
0.10 1.40 µs
0.40 0.50 µs
0.175 0.500 µs
0.40 µs
0.15 µs
0.10 µs
0.70 2.0 µs
0.28 0.50 µs
0.15 0.30 µs









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NTE52 Даташит, Описание, Даташиты
.350 (8.89)
.135 (3.45) Max
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
.040 (1.02)
Emitter
1.187 (30.16)
.215 (5.45)
.430
(10.92)
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case










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