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NTE5406 PDF даташит

Спецификация NTE5406 изготовлена ​​​​«NTE» и имеет функцию, называемую «Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate».

Детали детали

Номер произв NTE5406
Описание Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate
Производители NTE
логотип NTE логотип 

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NTE5406 Даташит, Описание, Даташиты
NTE5400 thru NTE5406
Silicon Controlled Rectifier (SCR)
0.8 Amp Sensitive Gate
Description:
The NTE5400 through NTE5406 sensitive gate SCR semiconductors are halfwave unidirectional
gate controlled rectifiers (SCR–thyristor) rated at 0.8 amps RMS maximum on–state current, with
rated voltages up to 600 volts.
These devices feature 200 microamp gate sensitivity, 5 millamp holding current and 8 amp surge ca-
pabilities.
Available in a TO–92 plastic package, these devices feature excellent environmental stress and tem-
perature cycling characteristics and, coupled with their small size and electrical performance, lend
themselves to various types of control functions encountered with sensors, motors, lamps, relays,
counters, triggers, etc.
Absolute Maximum Ratings:
Repetitive Peak Reverse Voltage (TC = +100°C), VRRM
NTE5400 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
NTE5401 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
NTE5402 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
NTE5403 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V
NTE5404 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5405 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5406 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Repetitive Peak Off–State Voltage (TC = +100°C), VDRXM
NTE5400 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
NTE5401 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
NTE5402 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
NTE5403 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V
NTE5404 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5405 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5406 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
RMS On–State Current, IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8A
Peak Surge (Non–Repetitive) On–State Current (One Cycle at 50 or 60Hz), ITSM . . . . . . . . . . . . 8A
Peak Gate–Trigger Current (3µs Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Peak Gate–Power Dissipation (IGT IGTM for 3µs Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Average Gate Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Typical Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5°C/W
Typical Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C/W









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NTE5406 Даташит, Описание, Даташиты
Electrical Characteristics:
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Peak OffState Current
Maximum OnState Voltage
DC Holding Current
DC GateTrigger Current
DC GateTrigger Voltage
I2t for Fusing Reference
IRRM
IDRXM
VTM
IHOLD
IGT
VGT
I2t
VRRM = Max, VDRXM = Max,
TC = +100°C, RGK = 1k
TC = +25°C, IT = 1.2A (Peak)
TC = +25°C
VD = 6VDC, RL = 100, TC = +25°C
VD = 6VDC, RL = 100, TC = +25°C
> 1.5msoc
50 µA
50 µA
1.7 V
5 mA
50 200 µA
0.8 V
0.15 A2sec
Critical Rate of Applied
Forward Voltage
dv/dt TC = +100°C
(critical)
5 V/µs
.210
(5.33)
Max
.135 (3.45) Min
Seating
Plane
.500
(12.7)
Min
.021 (.445) Dia Max
.100 (2.54)
KG A
.050 (1.27)
.105 (2.67) Max
.205 (5.2) Max
.165 (4.2) Max
.105 (2.67) Max










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Номер в каталогеОписаниеПроизводители
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NTE5403Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive GateNTE
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