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PDF NTE5410 Data sheet ( Hoja de datos )
| Número de pieza | NTE5410 | |
| Descripción | Silicon Controlled Rectifier (SCR) 3 Amp Sensitive Gate | |
| Fabricantes | NTE | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de NTE5410 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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NTE5408 thru NTE5410
Silicon Controlled Rectifier (SCR)
3 Amp Sensitive Gate
Description:
The NTE5408 through NTE5410 sensitive gate SCRs are designed to be driven directly with IC and
MOS devices. These SCRs feature proprietary, void–free glass–passivated chips and are hermeti-
cally sealed in TO5 type packages. These 4A devices are available in voltages up to 600V and with
a gate current of 200µA.
These NTE SCRs are reverse–blocking triode thyristors and may be switched from off–state to con-
duction by a current pulse applied to the gate terminal. The NTE5408 through NTE5410 are designed
for control applications in lighting, heating, cooling, and static switching relays.
Absolute Maximum Ratings:
Repetitive Peak Reverse Voltage (TC = +100°C), VRRM
NTE5408 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5409 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5410 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Repetitive Peak Off–State Voltage (TC = +100°C), VDRXM
NTE5408 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5409 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5410 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
RMS On–State Current (TC = +75°C, Conduction Angle of 180°), IT(RMS) . . . . . . . . . . . . . . . . . . . 4A
Peak Surge (Non–Repetitive) On–State Current (One Cycle at 50 or 60Hz), ITSM . . . . . . . . . . . 40A
Peak Gate–Trigger Current (3µs Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Peak Gate–Power Dissipation (IGT ≤ IGTM for 3µs Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Average Gate Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Typical Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5°C/W
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet NTE5410.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NTE5410 | Silicon Controlled Rectifier (SCR) 3 Amp Sensitive Gate | NTE |
| NTE5411 | Silicon Controlled Rectifier (SCR) 4 Amp / Sensitive Gate | NTE |
| NTE5416 | Silicon Controlled Rectifier (SCR) 4 Amp / Sensitive Gate | NTE |
| NTE5417 | Silicon Controlled Rectifier (SCR) 10 Amp | NTE |
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